IRGS30B60KPBF International Rectifier, IRGS30B60KPBF Datasheet - Page 2

• Manufacturer Part Number: IRGS30B60KPBF
• Description: IGBT UFAST 600V 78A D2PAK
• Manufacturer: International Rectifier

Specifications of IRGS30B60KPBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.35V @ 15V, 30A
• Current - Collector (ic) (max): 78A
• Power - Max: 370W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note 
Electrical Characteristics @ T
V
∆V
V
V
∆V
gfe
I
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
L
C
C
C
RBSOA
SCSOA
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
SC
IRGB/S/SL30B60KPbF
E
(BR)CES
CE(on)
GE(th)
on
off
tot
on
off
tot
ies
oes
res
g
ge
gc
(BR)CES
GE(th)
(Peak)
2
/∆T
/∆T
to
J
J
…
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Peak Short Circuit Collector Current
are on page 13
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.5
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
1000
1830
1175
1150
1785
1750
0.40
1.95
2.40
102
350
825
185
635
205
160
200
-10
2.6
4.5
5.0
7.5
18
14
44
46
28
31
46
28
32
60
—
—
—
2000
3000
1575
1085
1350
2435
2500
2.35
2.75
2.95
±100
250
153
620
955
200
235
255
5.5
21
66
60
39
40
60
39
42
90
—
—
—
—
—
—
—
mV/°C V
V/°C V
µA
nA
nC V
nH Measured 5mm from package
µJ
ns
µJ
ns
pF
µs
V
V
V
S
A
V
I
I
I
V
V
V
V
V
V
I
V
I
V
T
I
V
T
I
V
T
I
V
T
V
V
f = 1.0MHz
T
V
T
V
C
C
C
C
C
C
C
C
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
= 30A, V
= 30A, V
= 30A, V
= 30A
= 30A, V
= 30A, V
= 30A, V
= 30A, V
= 25°C
= 25°C
= 150°C
= 150°C
= 150°C, I
= 150°C, Vp = 600V, R
=500V,V
=360V,V
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= 0V, V
= ±20V, V
= 400V
= 15V, R
= 15V, R
= 15V, R
= 15V, R
= 0V
= 30V
Conditions
= 15V
GE
GE
, I
, I
C
C
GE
GE
GE
CC
CC
CC
CC
C
C
CE
CE
CE
C
GE
GE
= 500µA
= 1mA (25°C-150°C)
C
G
G
G
G
Conditions
= 250µA
= 1.0mA (25°C-150°C)
= 50A, PW = 80µs
= 15V, T
= 15V, T
= 15V, T
= 400V
= 400V
= 400V
= 400V
CE
= 600V
= 600V, T
= 600V, T
= 120A, Vp = 600V
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= +15V to 0V,R
= +15V to 0V
= 0V
J
J
J
= 25°C
= 150°C
= 175°C
J
J
G
= 150°C
= 175°C
www.irf.com
= 10Ω
G
=10Ω
Ref.Fig.
Ref.Fig.
WF1,WF2
8,9,10
8,9,10
12,14
13,15
5,6,7
WF1
WF2
WF3
WF3
CT1
CT4
CT4
CT4
CT4
CT2
CT3
11
17
16
4