IRGB4064DPBF International Rectifier, IRGB4064DPBF Datasheet - Page 7
![IGBT ULT FAST DIO 600V TO-220AB](/photos/19/8/190856/4243257_sml.jpg)
IRGB4064DPBF
Manufacturer Part Number
IRGB4064DPBF
Description
IGBT ULT FAST DIO 600V TO-220AB
Manufacturer
International Rectifier
Datasheet
1.IRGB4064DPBF.pdf
(11 pages)
Specifications of IRGB4064DPBF
Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.91V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
101W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Dc Collector Current
20A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
101W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +175°C
No. Of Pins
3
Rise Time
15ns
Rohs Compliant
Yes
Transistor Type
IGBT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRGB4064DPBF
Manufacturer:
RENESAS
Quantity:
11 450
www.irf.com
0.001
0.01
0.01
0.1
0.1
10
10
1
1
1E-006
1E-006
D = 0.50
D = 0.50
0.02
0.10
0.05
0.01
0.20
0.02
0.10
0.05
0.01
0.20
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
SINGLE PULSE
( THERMAL RESPONSE )
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1E-005
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
0.0001
0.0001
τ
J
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
i/Ri
R
1
R
1
0.001
τ
J
τ
τ
J
τ
2
1
R
τ
Ci= τi/Ri
τ
2
2
1
R
2
R
1
R
R
τ
3
3
1
R
τ
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
2
R
τ
0.001
2
τ
2
R
R
4
2
τ
4
R
4
4
τ
τ
C
C
τ
0.01
τ
Ri (°C/W)
1.939783 0.000975
1.721867 0.006135
IRGB4064DPbF
Ri (°C/W)
0.007362
0.342317 0.000048
0.647826 0.000192
0.493231 0.001461
τι (sec)
τι (sec)
0
0.01
0.1
7