IXSH24N60U1 IXYS, IXSH24N60U1 Datasheet
IXSH24N60U1
Manufacturer Part Number
IXSH24N60U1
Description
IGBT 48A 600V TO-247
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXSH24N60U1.pdf
(2 pages)
Specifications of IXSH24N60U1
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 24A
Current - Collector (ic) (max)
48A
Power - Max
150W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
18
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.2
Tfi, Typ, Igbt, (ns)
500
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Rthjc, Max, Igbt, (k/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSH24N60U1
Manufacturer:
IXYS
Quantity:
15 500
© 2000 IXYS All rights reserved
HiPerFAST
Short Circuit SOA Capability
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
Weight
Symbol
BV
V
I
I
V
CES
C25
C90
CM
GES
SC
JM
stg
CES
CGR
GEM
C
J
GE(th)
CE(sat)
GES
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, L = 100 mH
V
R
T
Mounting torque, TO-247
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
CE
CE
GE
GE
GE
G
= 82 W, non-repetitive
= 25°C to 150°C600
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 25°C
TM
= 15 V, T
= 15 V, V
= 750 mA, V
= 1.5 mA, V
= 0.8 • V
= 0 V
= 0 V, V
= I
IGBT with Diode
C90
, V
GE
GE
VJ
CE
CES
= 15 V
= ±20 V
= 125°C, R
= 360 V, T
CE
GE
= V
= 0 V
GE
GE
= 1 MW
J
T
T
IXSH 24N60U1
IXSH 24N60AU1
G
= 125°C,
J
J
= 10 W
(T
= 25°C
= 125°C
TO-247 AD
J
= 25°C, unless otherwise specified)
min.
IXSH 24N60U1
IXSH 24N60AU1
600
3.5
-55 ... +150
-55 ... +150
Characteristic Values
@ 0.8 V
Maximum Ratings
I
1.13/10 Nm/lb.in.
CM
typ.
= 48
300
260
600
±20
±30
150
150
CES
10
48
24
96
V
6
max.
±100
500
6.5
2.2
2.7
8
mA
mA
nA
°C
°C
°C
ms
°C
°C
W
V
V
V
A
A
A
A
V
V
V
V
g
TO-247 AD
G = Gate,
E = Emitter,
Features
• International standard package
• High frequency IGBT and anti-parallel
• 2nd generation HDMOS
• Low V
• MOS Gate turn-on
• Fast Recovery Epitaxial Diode (FRED)
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
Advantages
• Space savings (two devices in one
• Suitable for surface mounting
• Easy to mount with 1 screw, TO-247
• Reduces assembly time and cost
JEDEC TO-247 AD
FRED in one package
- for minimum on-state conduction
- drive simplicity
- soft recovery with low I
power supplies
package)
(isolated mounting screw hole)
600 V
600 V
losses
V
G
CES
C
CE(sat)
E
C = Collector,
TAB = Collector
48 A 2.2 V
48 A 2.7 V
I
C25
TM
RM
C (TAB)
process
92820I (7/00)
V
CE(sat)
1 - 2
Related parts for IXSH24N60U1
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXSH24N60U1 Summary of contents
Page 1
... 0.8 • V CES CE CES ± GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH 24N60U1 IXSH 24N60AU1 Maximum Ratings 600 GE ±20 ± 0.8 V CES = 125° 150 -55 ... +150 150 -55 ... +150 ...
Page 2
... K/W 0.25 Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 125°C 150 25° IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSH 24N60U1 IXSH 24N60AU1 TO-247 AD (IXSH) Outline Dim ...