IRG4PH40KDPBF International Rectifier, IRG4PH40KDPBF Datasheet
IRG4PH40KDPBF
Manufacturer Part Number
IRG4PH40KDPBF
Description
IGBT W/DIODE 1200V 30A TO247AC
Manufacturer
International Rectifier
Type
Ultrafastr
Datasheets
1.IRG4PH40KDPBF.pdf
(11 pages)
2.IRG4PH40KDPBF.pdf
(3 pages)
3.IRG4PH40KDPBF.pdf
(11 pages)
Specifications of IRG4PH40KDPBF
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
1600 pF
Current, Collector
30 A
Energy Rating
2.43 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
160 W
Resistance, Thermal, Junction To Case
0.77 °C/W
Speed, Switching
4 to 20 kHz
Voltage, Collector To Emitter Shorted
1200 V
Voltage, Collector To Emitter, Saturation
3.29 V
Transistor Type
IGBT
Dc Collector Current
30A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
160W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Package
TO-247
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
1200
Ic @ 25c (a)
30
Ic @ 100c (a)
15
Vce(on)@25c Typ (v)
2.74
Vce(on)@25c Max (v)
3.40
Ets Typ (mj)
2.43
Ets Max (mj)
2.8
Qrr Typ Nc 25c
140
Qrr Max Nc 25c
380
Vf Typ
2.60
Pd @25c (w)
160
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4PH40KDPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4PH40KDPBF
Manufacturer:
EXAR
Quantity:
340
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
• High short circuit rating optimized for motor control,
• Combines low conduction losses with high
• Tighter parameter distribution and higher efficiency
• IGBT co-packaged with HEXFRED
Benefits
• Latest generation 4 IGBT's offer highest power density
• HEXFRED
• This part replaces the IRGPH40KD2 and IRGPH40MD2
• For hints see design tip 97003
Thermal Resistance
Absolute Maximum Ratings
Features
Features
Features
Features
Features
R
R
R
R
Wt
V
I
I
I
I
I
I
t
V
P
P
T
T
Minimized recovery characteristics reduce noise, EMI and
t
V
ultrasoft recovery antiparallel diodes
products
C
C
CM
LM
F
FM
sc
www.irf.com
sc
than previous generations
switching losses
STG
switching speed
motor controls possible
CES
GE
D
D
J
θJC
θJC
θCS
θJA
GE
@ T
@ T
@ T
@ T
@ T
=10µs, V
= 15V
C
C
C
C
C
= 100°C
= 25°C
= 100°C
= 25°C
= 100°C
TM
CC
diodes optimized for performance with IGBTs.
= 720V , T
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Parameter
Parameter
J
= 125°C,
TM
ultrafast,
G
n-ch an nel
Min.
–––
–––
–––
–––
–––
300 (0.063 in. (1.6mm) from case)
IRG4PH40KD
C
E
10 lbf•in (1.1 N•m)
-55 to +150
TO-247AC
Max.
6 (0.21)
1200
± 20
130
160
8.0
Typ.
30
15
60
60
10
65
0.24
–––
–––
–––
Short Circuit Rated
@V
V
CE(on) typ.
V
GE
UltraFast IGBT
CES
= 15V, I
Max.
0.77
–––
–––
= 1200V
1.7
40
PD- 91577B
= 2.74V
C
= 15A
Units
Units
2/7/2000
g (oz)
°C/W
µs
°C
V
A
V
W
1
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IRG4PH40KDPBF Summary of contents
Page 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • High short circuit rating optimized for motor control, t =10µ 720V , T = 125° 15V GE • ...
Page 2
IRG4PH40KD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward ...
Page 3
rate d volta 0.1 Fig Typical Load Current ...
Page 4
IRG4PH40KD 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE ...
Page 5
1MHz ies res 2000 oes ies 1500 1000 500 C ...
Page 6
IRG4PH40KD 14 Ω Ohm 150 C ° J 800V V = 480V 15V Collector-to-emitter Current ...
Page 7
° ° ...
Page 8
IRG4PH40KD Same ty pe device as D .U.T. 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on) ...
Page 9
Figure 18e µ Figure 19. www.irf.com ...
Page 10
IRG4PH40KD Notes: Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature GE (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width ...
Page 11
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...