IRGB20B60PD1PBF International Rectifier, IRGB20B60PD1PBF Datasheet - Page 2

• Manufacturer Part Number: IRGB20B60PD1PBF
• Description: IGBT W/DIODE 600V 40A TO220AB
• Manufacturer: International Rectifier
• Type: Warpr

Specifications of IRGB20B60PD1PBF

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 215W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Capacitance, Gate: 1560 pF
• Current, Collector: 40 A
• Energy Rating: 195 μJ
• Package Type: TO-220AB
• Polarity: N-Channel
• Power Dissipation: 215 W
• Resistance, Thermal, Junction To Case: 0.58 °C/W
• Speed, Switching: 60 to 150 kHz
• Voltage, Collector To Emitter Shorted: 600 V
• Voltage, Collector To Emitter, Saturation: 2.05 V
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 40A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 215W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Package: TO-220AB
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: WARP 30-150 kHz
• Vces (v): 600
• Ic @ 25c (a): 40
• Ic @ 100c (a): 22
• Vce(on)@25c Typ (v): 2.50
• Vce(on)@25c Max (v): 2.80
• Ets Typ (mj): 0.195
• Ets Max (mj): 0.285
• Qrr Typ Nc 25c: 40
• Qrr Max Nc 25c: 60
• Vf Typ: 1.50
• Pd @25c (w): 215
• Environmental Options: PbF and Leaded
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRGB20B60PD1PBF

IRGB20B60PD1PbF
Notes:

‚
ƒ
„
…
∆V
∆V
Electrical Characteristics @ T
V
R
V
V
gfe
I
V
I
Switching Characteristics @ T
Qg
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
C
C
RBSOA
t
Q
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
G
ies
oes
res
oes
oes
gc
ge
rr
R
V
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
C
C
(BR)CES
GE(th)
2
CE(on)
CC
oes
oes
eff.
eff. (ER) Effective Output Capacitance (Energy Related)
= 80% (V
/∆TJ
eff. is a fixed capacitance that gives the same charging time as C
eff.(ER) is a fixed capacitance that stores the same energy as C
/∆T
typ. = equivalent on-resistance = V
J
CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Internal Gate Resistance
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Time Related)
Reverse Bias Safe Operating Area
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Peak Reverse Recovery Current
), V
GE
= 15V, L = 28µH, R
Parameter
Parameter
CE(on)
J
G
J
= 25°C (unless otherwise specified)
= 22Ω.
= 25°C (unless otherwise specified)
typ. / I
C
, where V
CE(on)
g
g
typ. = 2.05V and I
oes
oes
while V
while V
Min.
Min.
600
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
FULL SQUARE
CE
CE
is rising from 0 to 80% V
is rising from 0 to 80% V
Typ.
Typ.
1560
0.32
2.05
2.50
2.65
3.30
100
195
115
165
150
315
125
4.3
4.0
-11
1.0
0.1
1.5
1.4
5.0
6.0
6.0
2.9
3.7
19
68
24
10
95
20
19
13
95
20
83
61
28
38
40
70
—
—
C
= 13A. I
Max. Units
Max. Units
2.35
2.80
3.00
3.70
±100
250
102
140
145
285
135
215
195
410
140
105
5.0
1.8
1.7
7.0
8.0
8.0
5.2
6.7
36
15
26
25
17
42
57
60
—
—
—
—
—
—
—
—
—
—
—
D
(FET Equivalent) is the equivalent MOSFET I
mV/°C V
V/°C V
mA V
µA
nA
nC
pF
nC
µJ
ns
µJ
ns
ns
Ω
V
V
V
S
V
A
CES
CES
V
1MHz, Open Collector
I
I
I
I
V
V
I
I
V
I
V
V
I
V
T
I
V
T
I
V
T
I
V
T
V
V
f = 1Mhz
V
T
V
Rg = 22Ω, V
T
T
T
T
T
T
C
C
C
C
I
F
F
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
J
.
GE
GE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
GE
CC
= 4.0A, V
= 4.0A, V
.
= 13A, V
= 20A, V
= 13A, V
= 13A
= 13A, V
= 13A, V
= 13A, V
= 13A, V
= 20A, V
= 25°C
= 25°C
= 125°C
= 125°C
= 150°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 250µA
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V, V
= 400V
= 15V
= +15V, R
= +15V, R
= +15V, R
= +15V, R
= 0V
= 30V
= 0V, V
= 480V, Vp =600V
Conditions
GE
, I
C
C
GE
GE
GE
CC
CC
CC
CC
GE
GE
C
CE
CE
CE
C
GE
Ã
GE
= 500µA
= 1mA (25°C-125°C)
C
= 1.0mA
Ã
= 15V
= 15V
= 15V, T
= 40A, PW = 80µs
= 390V
= 390V
= 390V
= 390V
I
di/dt = 200A/µs
I
di/dt = 200A/µs
I
di/dt = 200A/µs
= 15V, T
= 0V
CE
= 600V
= 600V, T
Conditions
G
G
G
G
= 0V to 480V
= 80A
F
F
F
= 0V, T
= +15V to 0V
= 4.0A, V
= 4.0A, V
= 4.0A, V
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 10Ω, L = 200µH
= 0V
J
J
J
= 125°C
= 125°C
= 125°C
J
R
R
R
= 125°C
= 200V,
= 200V,
= 200V,
D
rating @ 25°C for
www.irf.com
Ref.Fig
WF1,WF2
WF1,WF2
19,20,21,22
4, 5,6,8,9
Ref.Fig
11,13
12,14
7,8,9
CT1
CT3
CT3
CT3
CT3
CT2
CT5
10
17
16
15
19
21
3