IXGH60N60C3 IXYS, IXGH60N60C3 Datasheet

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IXGH60N60C3

Manufacturer Part Number
IXGH60N60C3
Description
IGBT 75A 600V TO-247AD
Manufacturer
IXYS
Series
GenX3™r
Datasheets

Specifications of IXGH60N60C3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
380W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
60
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
50
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.8
Rthjc, Max, Igbt, (°c/w)
0.33
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH60N60C3D
Manufacturer:
SYNERGY
Quantity:
5 000
Company:
Part Number:
IXGH60N60C3D1
Quantity:
2 400
GenX3
IGBT
High Speed PT IGBT for
40-100kHz Switching
Symbol
V
V
V
V
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2010 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
A
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
Clamped Inductive Load
T
T
Continuous
Transient
T
T
T
T
T
V
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
Test Conditions
I
I
V
V
I
C
C
C
J
J
C
C
C
C
C
C
GE
CE
CE
600V
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by Leads)
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, T
= 25°C
= 250μA, V
= 250μA, V
= V
= 0V, V
= 40A, V
CES,
V
VJ
GE
GE
GE
= 125°C, R
= ±20V
= 0V
GE
CE
= 15V
= 0V
= V
GE
GE
= 1MΩ
G
= 3Ω
T
T
J
J
= 125°C
= 125°C
IXGH60N60C3
Characteristic Values
600
Min.
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
V
I
CE
CM
1.13/10
= 125
Typ.
2.2
1.7
V
±20
±30
360
400
380
150
300
260
600
600
75
60
40
CES
6
±100
Max.
2.5
Nm/lb.in.
5.5
50
1 mA
mJ
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
A
V
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi (typ)
Optimized for Low Switching Losses
Square RBSOA
Avalanche rated
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
= 600V
= 60A
= 50ns
≤ ≤ ≤ ≤ ≤ 2.5V
C
Tab = Collector
Tab
= Collector
DS99928B(01/10)

Related parts for IXGH60N60C3

IXGH60N60C3 Summary of contents

Page 1

... I = 250μ GE(th CES CE CES ±20V 0V, V GES 40A 15V CE(sat © 2010 IXYS CORPORATION, All Rights Reserved IXGH60N60C3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 360 40 400 = 3Ω 125 G CM ≤ CES 380 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 Characteristic Values Min ...

Page 2

... CES 0. 0. 1.25 112 86 0.80 0.21 (Clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH60N60C3 TO-247 (IXGH) Outline Max Terminals Gate Emitted 110 ns Dim. Millimeter ns Min. 0. 4 1.65 ...

Page 3

... 15V GE 13V 11V 2.0 2.4 2.8 3.2 = 125º 15V GE 13V 11V 2.0 2.4 2.8 3 25º IXGH60N60C3 Fig. 2. Extended Output Characteristics @ T 300 V = 15V GE 13V 250 11V 200 150 9V 100 Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V GE 1.1 1.0 0.9 I ...

Page 4

... C ies 100 80 C oes res 20 0 100 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH60N60C3 Fig. 8. Gate Charge V = 300V 40A NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º 3Ω < 10V / ns 150 ...

Page 5

... R = 3Ω 15V G GE 120 V = 480V CE 120 110 100 100 25º IXGH60N60C3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 480V 125º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance d(off 125º ...

Page 6

... Degrees Centigrade J IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 110 50 100 80A 40A 80A 40A 105 115 125 IXGH60N60C3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 480V 25ºC, 125º Amperes IXYS REF: G_60N60C3(6D)01-15-10-E ...

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