IRGS15B60KDPBF International Rectifier, IRGS15B60KDPBF Datasheet - Page 2

IGBT UFAST 600V 31A COPACK D2PAK

IRGS15B60KDPBF

Manufacturer Part Number
IRGS15B60KDPBF
Description
IGBT UFAST 600V 31A COPACK D2PAK
Manufacturer
International Rectifier
Datasheet

Specifications of IRGS15B60KDPBF

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 15A
Current - Collector (ic) (max)
31A
Power - Max
208W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Power Dissipation Pd
208W
Collector Emitter Voltage V(br)ceo
600V
Continuous Collector Current Ic
31A
Collector Emitter Saturation Voltage Vce(sat)
2.2V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Leaded Process Compatible
Yes
Package
D2-Pak
Circuit
Co-Pack
Switching
Hard
Switching Speed
ULTRAFAST 8-30 kHz
Vces (v)
600
Ic @ 25c (a)
31
Ic @ 100c (a)
15
Vce(on)@25c Typ (v)
1.80
Vce(on)@25c Max (v)
2.2
Ets Typ (mj)
0.56
Ets Max (mj)
0.785
Vf Typ
1.20
Pd @25c (w)
139
Environmental Options
PbF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IRGB/S/SL15B60KDPbF
Electrical Characteristics @ T
Switching Characteristics @ T
Note
RBSOA
SCSOA
V
∆V
V
V
g
I
V
I
Qg
Qge
Qgc
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
tot
on
off
tot
ies
oes
res
2
(BR)CES
GE(th)

/
/∆T
T
to
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Recovery energy of the diode
Diode Reverse Recovery time
Diode Peak Reverse Recovery Current
Reverse Bias Safe Operting Area
Short Circuit Safe Operting Area
are on page 15
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
–––
––– 2.05 2.50
––– 2.10 2.60
––– 10.6
–––
–––
––– 1.20 1.45
––– 1.20 1.45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.5
3.5
10
FULL SQUARE
1.80 2.20
–––
500 1000
––– ±100
220
340
560
184
355
490
835 1070
203
850
540
-10
0.3
4.5
5.0
7.0
–––
56
26
34
16
20
34
18
28
75
35
92
29
–––
–––
––– mV/°C V
–––
150
330
455
785
200
470
600
226
–––
–––
–––
720
111
5.5
–––
84
10
39
44
22
26
44
25
36
33
V/°C
µA
nA
nC
pF
V
V
V
S
V
µJ
ns
µJ
ns
µs
µJ
ns
A
f = 1.0MHz
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
I
V
Ls = 150nH
I
V
Ls = 150nH, T
I
V
Ls = 150nH
I
V
Ls = 150nH, T
V
V
T
V
T
V
T
V
V
C
C
C
C
C
C
C
C
C
C
J
CC
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
GE
GE
CC
CC
CC
GE
= 15A, V
= 15A, V
= 15A, V
= 15A
= 15A
= 15A
= 15A, V
= 15A, V
= 15A, V
= 15A, V
= 150°C
= 150°C, I
= 150°C, Vp =600V,R
= 500V, V
= V
= V
= 50V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V,R
= 15V, R
= 15V,R
= 15V, R
= 0V
= 30V
= 360V, V
= 400V, I
= 15V,R
GE
GE
, I
, I
C
C
GE
GE
GE
CC
CC
CC
CC
CE
CE
C
C
C
Conditions
Conditions
G
G
G
T
C
= 500µA
= 1.0mA, (25°C-150°C)
G
G
GE
F
= 250µA
= 1.0mA, (25°C-150°C)
= 20A, PW=80µs
= 15V
= 15V
= 15V
J
= 400V
= 400V
J
= 400V
= 400V
J
= 22Ω, L = 200µH
= 22Ω, L = 200µH
GE
= 22Ω, Ls = 150nH
= 600V
= 62A, Vp =600V
= 600V, T
= 22Ω, L = 200µH
= 22Ω, L = 200µH
= 15A, L = 200µH
= 25°C
= 150°C
= 150°C
= +15V to 0V,
= +15V to 0V
T
T
www.irf.com
J
J
= 25°C ƒ
= 150°C ƒ
G
T
T
J
J
J
= 150°C
= 22Ω
= 125°C
= 150°C
R
G
= 22Ω
9, 10,11
Ref.Fig.
5, 6,7
9, 10,11
CT4,WF3
17,18,19
Ref.Fig.
12
WF1WF2
13,15
14, 16
20,21
WF4
CT4
CT4
CT3
CT1
WF1
WF2
CT2
CT4
CT4
8
4

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