IXGH50N60C2 IXYS, IXGH50N60C2 Datasheet - Page 5

• Manufacturer Part Number: IXGH50N60C2
• Description: IGBT 600V 75A TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH50N60C2

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 400W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 48
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.74
• Rthjc, Max, Igbt, (°c/w): 0.31
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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200
180
160
140
120
100
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
80
60
40
20
16
14
12
10
8
6
4
2
0
25
0
1
t
t
R
V
V
d(off)
fi
Sw itching Tim e on Tem perature
GE
CE
G
35
Fig. 13. Dependence of Turn-Off
I
C
V
I
I
-
= 2Ω
C
G
= 480V
= 15V
CE
= 40A
- - - - -
= 40A
= 10mA
45
= 300V
30
Fig. 15. Gate Charge
T
J
55
- Degrees Centigrade
Q
G
- nanoCoulombs
65
60
I
C
= 20A
75
85
90
Fig. 16. Maxim um Transient Therm al Resistance
I
C
= 20A
95
105 115 125
120
I
10
C
= 80A
Pulse Width - milliseconds
150
10000
1000
100
100
90
80
70
60
50
40
30
20
10
10
0
100
0
f = 1 MHz
5
T
R
dV/dT < 10V/ns
200
J
Fig. 16. Capacitance
G
100
= 125
Fig. 14. Reverse-Bias
Safe Operating Area
= 10Ω
10
º
C
300
15
V
V
C E
C E
- Volts
20
- Volts
IXGH 50N60C2
IXGT 50N60C2
400
25
500
C
C
C
30
ies
oes
res
35
600
1000
40