IRG4PH50UPBF International Rectifier, IRG4PH50UPBF Datasheet
IRG4PH50UPBF
Specifications of IRG4PH50UPBF
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IRG4PH50UPBF Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR Features Features Features Features Features • UltraFast: Optimized for high operating frequencies kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than ...
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IRG4PH50U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...
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rate d volta 0.1 Fig Typical Load ...
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IRG4PH50U 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 ...
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1MHz ies 6000 res oes ce gc 5000 C ies 4000 3000 C ...
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IRG4PH50U 5 150° 15V 960V Collector Current (A) Fig Typical Switching Losses vs. Collector-to-Emitter Current ...
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L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...
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IRG4PH50U Case Outline and Dimensions — TO-247AC (. (. (. ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...