IXGH72N60B3 IXYS, IXGH72N60B3 Datasheet - Page 4

• Manufacturer Part Number: IXGH72N60B3
• Description: IGBT 600V TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH72N60B3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 60A
• Current - Collector (ic) (max): 75A
• Power - Max: 540W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 72
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.80
• Tfi, Typ, Tj=25°c, Igbt, (ns): 90
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.20
• Rthjc, Max, Igbt, (°c/w): 0.23
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
130
120
110
100
100
90
80
70
60
50
40
30
20
10
1.00
0.10
0.01
10
0
0.00001
0
0
T
J
f
= - 40ºC
= 1 MHz
20
125ºC
5
25ºC
40
Fig. 7. Transconductance
10
60
Fig. 9. Capacitance
0.0001
I
15
C
80
- Amperes
V
CE
100
- Volts
20
120
C res
C oes
C ies
25
Fig. 11. Maximum Transient Thermal Impedance
140
30
0.001
160
35
180
Pulse Width - Seconds
200
40
0.01
280
240
200
160
120
80
40
16
14
12
10
0
8
6
4
2
0
100
0
Fig. 10. Reverse-Bias Safe Operating Area
V
I
I
T
R
dV / dt < 10V / ns
20
C
G
CE
J
G
= 60A
= 10mA
= 125ºC
= 3Ω
= 300V
40
200
60
0.1
Fig. 8. Gate Charge
80
Q
300
G
V
100 120 140 160 180 200 220 240
- NanoCoulombs
CE
- Volts
400
1
IXGT72N60B3
IXGH72N60B3
500
IXYS REF: G_72N60B3(76)02-10-09-D
600
10