IXGT28N60B IXYS, IXGT28N60B Datasheet
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Manufacturer Part Number
IXGT28N60B
Description
IGBT 40A 600V TO-268
Specifications of IXGT28N60B
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 28A
Current - Collector (ic) (max)
40A
Power - Max
150W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
40
Ic90, Tc=90°c, Igbt, (a)
28
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
2
Tfi, Typ, Tj=25°c, Igbt, (ns)
200
Eoff, Typ, Tj=125°c, Igbt, (mj)
6
Rthjc, Max, Igbt, (°c/w)
0.83
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Low V
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
V
I
I
V
© 2003 IXYS All rights reserved
CM
C25
C90
CES
GES
JM
GEM
J
stg
CES
CGR
GES
C
GE(th)
CE(sat)
d
CE(sat)
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Mounting torque (M3) TO-247
TO-247
TO-268
Test Conditions
I
V
V
V
I
C
C
J
J
C
C
C
GE
C
CE
CE
GE
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 15 V, T
= 25°C
= 250 µA, V
= V
= 0 V
= 0 V, V
= I
IGBT
C90
CES
, V
GE
GE
VJ
= 15 V
= ±20 V
= 125°C, R
CE
= V
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
(T
J
J
= 25°C
= 125°C
J
= 25°C, unless otherwise specified)
IXGH 28N60B
IXGT 28N60B
min.
2.5
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
1.13/10 Nm/lb.in.
I
typ.
CM
= 56
600
600
±20
±30
150
150
300
40
28
80
CES
6
4
max.
±100
100
500
5.5
2.0
°C
°C
°C
°C
µA
µA
nA
W
V
V
V
V
A
A
A
A
g
g
V
V
TO-268
(IXGT)
G = Gate,
E = Emitter,
Features
Applications
Advantages
TO-247 AD
(IXGH)
V
I
V
C25
International standard packages
Low V
- for minimum on-state conduction
High current handling capability
MOS Gate turn-on
- drive simplicity
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Easy to mount with 1 screw
(isolated mounting screw hole)
Low losses, high efficiency
High power density
CES
CE(sat)
losses
CE(sat)
G
G
C
E
= 600 V
= 40 A
= 2.0 V
C = Collector,
TAB = Collector
E
DS98570A(08/03)
C (TAB)
C (TAB)
Related parts for IXGT28N60B
IXGT28N60B Summary of contents
... GE(th CES CE CES ±20 V GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXGH 28N60B IXGT 28N60B Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± Ω 0.8 V CES 150 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 6 4 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
... CES fi E off R thJC R TO-247 thCK IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 1500 130 ...
... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 5 4 56A C 3.5 28A 14A 3 2 Volts G E © 2003 IXYS All rights reserved 240 200 9V 160 120 2.5 3 1.6 1.5 1.4 1.3 1.2 1.1 7V 1.0 0.9 0.8 5V 0.7 2 25ºC ...
... I = 14A C 500 400 I = 28A C 300 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1 off C 8 ...
... C 200 150 Degrees Centigrade J Fig. 15. Capacitance 10000 MHz 1000 100 Volts 0.5 0.1 1 © 2003 IXYS All rights reserved 56A 56A 105 115 125 C ies C oes C res Fig. 16. Maxim um Transient Therm al Resistance 10 Pulse Width - milliseconds IXGH 28N60B IXGT 28N60B Fig. 14. Gate Charge ...
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