IXBH5N160G IXYS, IXBH5N160G Datasheet
IXBH5N160G
Manufacturer Part Number
IXBH5N160G
Description
IC TRANS BIPO 1600V 5.7A TO247AD
Manufacturer
IXYS
Series
BIMOSFET™r
Datasheet
1.IXBH5N160G.pdf
(2 pages)
Specifications of IXBH5N160G
Voltage - Collector Emitter Breakdown (max)
1600V
Vce(on) (max) @ Vge, Ic
7.2V @ 15V, 3A
Current - Collector (ic) (max)
5.7A
Power - Max
68W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1600
Ic25, Tc=25°c, (a)
5.7
Ic90, Tc=90°c, (a)
3.5
Vce(sat), Typ, Tj=25°c, (v)
4.9
Tf Typ, Tj=25°c, (ns)
70
Gate Drive, (v)
10
Rthjc, Max, (k/w)
1.85
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXBH5N160G
Manufacturer:
IXYS
Quantity:
6 000
Preliminary data sheet
High Voltage
BIMOSFET
Monolithic Bipolar MOS Transistor
Symbol
V
V
I
I
I
V
P
Symbol
V
V
I
I
t
t
t
t
C
Q
V
R
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
Phone: +49-6206-503-0, Fax: +49-6206-503627
IGBT
C25
C90
CM
CES
GES
d(off)
d(on)
f
r
tot
CE(sat)
GE(th)
F
CES
GES
CEK
Gon
thJC
ies
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
T
Conditions
I
I
V
V
V
V
(reverse conduction); I
C
C
VJ
C
C
C
GE
GE
CE
CE
CE
= 3 A; V
= 0.3 mA; V
D-68623 Lampertheim
= 25°C
= 90°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= 600V; V
= 0 V; V
= 25 V; V
= 10/0 V; R
= 0 V; V
CE
GE
= 960 V; I
= 10/0 V; R
TM
GE
V
CE
CE
GE
= 15 V; T
GE
GE
GE
= V
= 0.8V
=
G
= 0 V; f = 1 MHz
= 10 V; I
= V
C
= 47
CES
20 V
= 3 A
G
CE
VJ
;
= 47
CES
T
= 125°C
F
VJ
VJ
; T
; T
= 3 A
C
= 25°C
= 125°C
T
= 3 A
VJ
VJ
VJ
= 125°C
= 25°C
= 125°C
(T
VJ
= 25 C, unless otherwise specified)
min.
3.5
IXBH 5N160 G
IXBP 5N160 G
Characteristic Values
Maximum Ratings
0.8V
G
C
140
200
120
325
E
typ.
4.9
5.6
50
70
26
1600
6
5.7
3.5
CES
68
20
6
max.
1.85 K/W
150
100
7.2
5.5
nC
W
µA
µA
nA
pF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
V
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
I
V
V
t
TO-220 AB
TO-247 AD
A = Anode, C = Cathode , TAB = Cathode
Features
• High Voltage BIMOSFET
• industry standard package
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
C25
f
- substitute for high voltage MOSFETs
- fast switching for high frequency
- reverse conduction capability
- TO-220AB
- TO-247AD
epoxy meets UL94V-0
- MOSFET compatible control
CES
CE(sat)
G
operation
with significantly lower voltage drop
10 V turn on gate voltage
C
G
E
C
E
= 5.7 A
= 1600 V
= 4.9 V
= 70 ns
(IXBP)
(IXBH)
TM
C (TAB)
C (TAB)
1 - 2
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IXBH5N160G Summary of contents
Page 1
... 600V Gon (reverse conduction thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2003 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXBP 5N160 G IXBH 5N160 Maximum Ratings 1600 20 5.7 3.5 ...
Page 2
... Component Symbol Conditions stg M mounting torque D Symbol Conditions R with heatsink compound thCH Weight (TO-220) (TO-247) © 2003 IXYS All rights reserved Maximum Ratings -55...+150 -55...+125 (TO-220) 0.6 Nm (TO-247) 1.2 Nm Characteristic Values min. typ. max. 0.25 K IXBP 5N160 G IXBH 5N160 G Dimensions TO-220 AB ...