IXGQ28N120BD1 IXYS, IXGQ28N120BD1 Datasheet
IXGQ28N120BD1
Specifications of IXGQ28N120BD1
Related parts for IXGQ28N120BD1
IXGQ28N120BD1 Summary of contents
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... 25°C CES CE CES ± GES 28A CE(sat Note 2 © 2003 IXYS All rights reserved IXGQ 28N120B IXGQ 28N120BD1 Maximum Ratings 1200 = 1 MΩ 1200 GE ±20 ± 150 = 10 Ω @0.8 V CES 250 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. 300 Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... Switching times may increase for V higher T or increased Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min ...
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... V - Volts CE Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 56A C 28A 14A Volts G E © 2003 IXYS All rights reserved 270 240 210 180 9V 150 120 2.5 3 3.5 4 1.3 1.2 1.1 9V 1.0 7V 0.9 0.8 0.7 5V 0.6 2.5 3 3.5 4 100 T = 25º ...
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... T = 125º 15V GE 1000 V = 960V CE 800 600 I = 14A C 400 200 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 100 25º 700 600 500 ...
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... C E 1.00 0.50 0.10 1 © 2003 IXYS All rights reserved I = 14A 56A 14A 105 115 125 C ies C oes C res Fig. 16. Maxim um Trans ient Therm al Res istance 10 Pulse Width - milliseconds IXGQ 28N120B IXGQ28N120BD1 Fig. 14. Gate Charge 600V 28A 0mA nanoCoulombs G 100 100 ...
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... 110 100 90 0 200 400 600 800 A/µs -di /dt F Fig. 21 Recovery time t versus - 0.01 0.1 t 4,850,072 4,931,844 5,034,796 5,063,307 4,835,592 4,881,106 5,017,508 5,049,961 IXGQ 28N120B IXGQ28N120BD1 100° 600V 20A 10A 1000 0 200 400 600 Fig. 19 Peak reverse current I r versus -di ...