IXGH40N60B2D1 IXYS, IXGH40N60B2D1 Datasheet - Page 6

• Manufacturer Part Number: IXGH40N60B2D1
• Description: IGBT 600V 75A FRD TO-247
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH40N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 30A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 40
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 82
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.1
• Rthjc, Max, Igbt, (°c/w): 0.31
• If, Tj=110°c, Diode, (a): 30
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 17. Forward current I
Fig. 20. Dynamic parameters Q
Z
Fig. 23. Transient thermal resistance junction to case
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
I
of the following U.S. patents:
0.001
F
K
thJC
0.01
K/W
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
60
50
40
30
20
10
0
1
0
0
T
T
VJ
VJ
versus T
=100°C
=150°C
40
1
I
RM
Q
r
VJ
0.0001
80
2
T
VJ
F
T
V
120
VJ
versus V
F
=25°C
3
°C
r
, I
0.001
V
160
RM
F
t
Q
rr
1000
Fig. 18. Reverse recovery charge Q
Fig. 21. Recovery time t
r
800
600
400
200
nC
90
80
70
60
ns
0
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
100
0.01
0
T
V
VJ
R
= 100°C
= 300V
200
versus -di
I
I
I
F
F
F
400
= 60A
= 30A
= 15A
I
I
I
0.1
F
F
F
F
/dt
= 60A
= 30A
= 15A
-di
600
F
-di
/dt
T
V
F
VJ
R
t
rr
/dt
= 100°C
= 300V
versus -di
A/µs
800
s
A/µs
DSEP 29-06
1000
1000
1
F
/dt
r
I
V
RM
FR
Fig. 19. Peak reverse current I
Constants for Z
30
25
20
15
10
20
15
10
Fig. 22. Peak forward voltage V
A
V
5
0
5
0
1
2
3
0
0
i
T
I
t
T
V
F
fr
VJ
VJ
R
= 100°C
= 30A
= 100°C
= 300V
200
200
versus -di
t
IXGH 40N60B2D1
IXGT 40N60B2D1
fr
versus di
I
I
I
F
F
F
R
0.502
0.193
0.205
= 60A
= 30A
= 15A
400
400
thi
thJC
(K/W)
V
FR
calculation:
F
600
600
/dt
F
/dt
di
-di
F
/dt
F
/dt
A/µs
A/µs
800
800
t
0.0052
0.0003
0.0162
i
6,534,343
(s)
1000
1000
RM
FR
1.00
0.75
0.50
0.25
0.00
µs
and
t
fr