IXGH100N30C3 IXYS, IXGH100N30C3 Datasheet - Page 2

• Manufacturer Part Number: IXGH100N30C3
• Description: IGBT HI SPEED 300V 100A TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH100N30C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.85V @ 15V, 100A
• Current - Collector (ic) (max): 75A
• Power - Max: 460W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector-emitter Voltage: 300V
• Operating Temperature (min): -55C
• Vces, (v): 300
• Ic25, Tc=25°c, Igbt, (a): 500
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 100
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.85
• Tfi, Typ, Tj=25°c, Igbt, (ns): 94
• Eoff, Typ, Tj=125°c, Igbt, (mj): 0.52
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
Q
Q
Q
t
t
E
t
t
E
t
t
E
t
t
E
R
R
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
d(on)
ri
d(off)
fi
d(on)
ri
d(off)
fi
fs
on
off
on
off
ies
oes
res
thJC
thCK
g
ge
gc
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
J
= 25°C, unless otherwise specified)
I
Pulse test, t ≤ 300µs; duty cycle, d ≤ 2%.
V
I
Inductive Load, T
I
V
Inductive Load, T
I
V
Test Conditions
C
C
C
C
CE
CE
CE
= 50A, V
= 50A, V
PRELIMINARY TECHNICAL INFORMATION
= 200V, R
= 200V, R
= 60A, V
= 25V, V
= I
C110
, V
GE
GE
GE
CE
GE
= 15V
= 15V
G
G
= 10V,
= 15V, V
= 0V, f = 1MHz
4,835,592
4,881,106
= 2Ω
= 2Ω
J
J
= 25° ° ° ° ° C
= 125° ° ° ° ° C
CE
4,931,844
5,017,508
5,034,796
= 0.5 • V
5,049,961
5,063,307
5,187,117
CES
5,237,481
5,381,025
5,486,715
Min.
40
Characteristic Values
6300
6,162,665
6,259,123 B1
6,306,728 B1
0.23
0.52
0.35
0.75
0.21
Typ.
435
115
162
105
131
113
75
27
60
23
38
94
24
37
0.27 °C/W
Max.
160
6,404,065 B1
6,534,343
6,583,505
0.9
°C/W
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
S
6,710,405 B2 6,759,692
6,710,463
6,683,344
TO-247 AD Outline
Dim.
6,727,585
6,771,478 B2 7,071,537
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
IXGH100N30C3
4.7
2.2
2.2
1.0
Millimeter
.4
7,005,734 B2
7,063,975 B2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
e
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
7,157,338B2
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216