IXGT10N170 IXYS, IXGT10N170 Datasheet

IGBT NPT 1700V 20A TO-268

IXGT10N170

Manufacturer Part Number
IXGT10N170
Description
IGBT NPT 1700V 20A TO-268
Manufacturer
IXYS
Datasheet

Specifications of IXGT10N170

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 10A
Current - Collector (ic) (max)
20A
Power - Max
110W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.7kV
Collector Current (dc) (max)
20A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-268
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1700
Ic25, Tc=25°c, Igbt, (a)
20
Ic90, Tc=90°c, Igbt, (a)
10
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Igbt, (ns)
495
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.7
Rthjc, Max, Igbt, (°c/w)
1.1
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGT10N170A
Manufacturer:
VISHAY
Quantity:
7 000
High Voltage
IGBT
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C25
C90
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C unless otherwise specified)
Test Conditions
I
I
V
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
C
C
C
C
J
C
C
C
C
CE
GE
CE
GE
= 250μA, V
= I
= 250μA, V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 25°C, 1ms
= 0V, V
= 25°C
= 90°C
= 0.8 • V
= 0V
= 15V, T
C90
, V
GE
GE
= 15V, Note 1
CES
VJ
GE
CE
= ± 20V
= 125°C, R
= 0V
= V
GE
GE
= 1M
G
T
T
= 16
J
J
= 125°C
= 125°C
Ω
Ω
IXGH10N170
IXGT10N170
@ 0.8 • V
1700
-55 ... +150
-55 ... +150
Min.
3.0
Characteristic Values
I
1.13/10
CM
Maximum Ratings
1700
1700
± 20
± 30
= 20
110
150
300
260
20
10
70
CES
Typ.
6
4
2.7
3.4
±100
Max.
500
Nm/lb.in.
5.0
4.0
50
μA
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
g
g
G = Gate
E = Emitter
V
I
V
TO-247 (IXGH)
TO-268 (IXGT)
Features
Applications
Advantages
C90
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
CES
CE(sat)
G
C
G
≤ ≤ ≤ ≤ ≤ 4.0V
= 1700V
= 10A
E
E
C
TAB = Collector
= Collector
DS98992A(10/08)
C (TAB)
C (TAB)

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IXGT10N170 Summary of contents

Page 1

... 0.8 • V CES CE CES 0V ± 20V GES 15V, Note 1 CE(sat) C C90 GE © 2008 IXYS CORPORATION, All rights reserved IXGH10N170 IXGT10N170 Maximum Ratings 1700 Ω 1700 ± 20 ± Ω 0.8 • V CES 110 -55 ... +150 150 -55 ... +150 300 260 1.13/ Characteristic Values Min. ...

Page 2

... Characteristic Values Min. Typ. 3.8 6.3 33 700 0.5 • CES 132 600 30 270 135 495 0.25 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH10N170 IXGT10N170 TO-247 AD Outline Max Terminals Gate Dim. Millimeter ns Min 2.87 2 ...

Page 3

... Junction Temperature V = 15V 20A C I -50 - Degrees Centigrade J Fig. 6. Input Admittance 5 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8 Volts GE IXGH10N170 IXGT10N170 V = 15V GE 13V 11V CE(sat) =10A 100 125 150 40ºC J 25ºC 125ºC 8.5 9.0 9.5 10.0 IXYS REF: G_10N170(3N)10-13-08-A ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions 40ºC J 25ºC 125º 1,000 100 1200 1400 1600 1800 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Second Fig. 8. Gate Charge 850V 10A 10mA NanoCoulombs G Fig. 10. Capacitance C ies C oes C res MHz Volts CE 0.1 IXGH10N170 IXGT10N170 ...

Page 5

... T = 125º 15V 850V CE 550 500 I = 10A C 450 400 350 I = 20A C 300 250 200 Ohms G IXGH10N170 IXGT10N170 160 d(off) 150 = 15V GE 140 130 120 110 100 90 95 105 115 125 500 450 400 350 300 250 200 150 100 100 ...

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