IXGH48N60C3D1 IXYS, IXGH48N60C3D1 Datasheet

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IXGH48N60C3D1

Manufacturer Part Number
IXGH48N60C3D1
Description
IGBT 250A 600V TO-247AD
Manufacturer
IXYS
Series
GenX3™r
Datasheets

Specifications of IXGH48N60C3D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 30A
Current - Collector (ic) (max)
75A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Channel Type
N
Configuration
Single
Collector-emitter Voltage
600V
Collector Current (dc) (max)
75A
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
48
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
38
Eoff, Typ, Tj=125°c, Igbt, (mj)
0.57
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
30
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH48N60C3D1
Manufacturer:
ST
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Part Number:
IXGH48N60C3D1
Manufacturer:
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Quantity:
20 000
Company:
Part Number:
IXGH48N60C3D1
Quantity:
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Part Number:
IXGH48N60C3D1-KOREA
Manufacturer:
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Quantity:
20 000
High speed PT IGBT for
40-100kHz Switching
Symbol
V
V
V
V
I
I
I
I
I
E
SSOA
(RBSOA)
P
T
T
T
T
T
F
Weight
Symbol
(T
V
I
I
V
© 2009 IXYS CORPORATION, All rights reserved
GenX3
with Diode
C25
C110
D110
CM
A
CES
GES
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
AS
C
GE(th)
CE(sat)
J
= 25°C, Unless Otherwise Specified)
I
V
V
V
I
T
T
Continuous
Transient
T
T
T
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque
Test Conditions
Test Conditions
C
C
TM
GE
CE
CE
J
J
C
C
C
C
C
C
C
GE
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by Leads)
= 110°C
= 110°C
= 25°C, 1ms
= 25°C
= 25°C
= 15V, T
= 25°C
= 250μA, V
= V
= 0V
= 0V, V
= 30A, V
600V IGBT
CES
GE
VJ
GE
= ±20V
= 125°C, R
CE
= 15V, Note 1
= V
GE
GE
= 1MΩ
G
T
T
J
= 3Ω
J
= 125°C
= 125°C
IXGH48N60C3D1
Characteristic Values
@V
Min.
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
I
CM
CE
1.13/10
< 600
= 100
±20
±30
250
300
150
300
260
600
600
300
48
75
30
30
Typ.
2.3
1.8
6
±100
1.75 mA
300
Max.
Nm/lb.in
5.5
2.5
mJ
W
°C
°C
°C
°C
°C
μA
nA
V
V
V
V
A
A
A
A
V
A
A
V
V
V
g
V
I
V
t
TO-247
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
Fast Switching
Avalanche Rated
International Standard Package
High Power Density
Low Gate Drive Requirement
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
TAB
C
≤ ≤ ≤ ≤ ≤ 2.5V
= 600V
= 48A
= 38ns
= Collector
= Collector
( TAB )
DS99945A(01/09)

Related parts for IXGH48N60C3D1

IXGH48N60C3D1 Summary of contents

Page 1

... GE(th CES CE CES 0V ±20V GES 30A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All rights reserved IXGH48N60C3D1 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 250 30 300 = 3Ω 100 G CM < 600 @V CE 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 6 Characteristic Values Min ...

Page 2

... Characteristic Values (T = 25°C, Unless Otherwise Specified) J Min. Typ 150°C 1 100° 100°C 100 J = 30V 25 R 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH48N60C3D1 TO-247 AD Outline Max Dim. Millimeter ns Min 4.7 A 2.2 100 2 1.0 b 1.65 1 ...

Page 3

... V = 15V GE 13V 1.1 11V 1.0 9V 0.9 0.8 0.7 7V 0.6 0.5 1.6 2 2.4 2.8 100 25º IXGH48N60C3D1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature I = 60A 30A 15A 100 T - Degrees Centigrade J Fig. 6. Input Admittance T = -125º ...

Page 4

... C ies oes res 200 Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds IXGH48N60C3D1 Fig. 8. Gate Charge V = 300V 30A NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º 3Ω < 10V / ns 250 300 350 400 450 500 ...

Page 5

... C 0.6 0.4 0 15A C 0 105 115 125 110 160 - - - - 105 140 = 15V 100 95 120 90 85 100 IXGH48N60C3D1 Fig. 13. Inductive Swiching Energy Loss vs. Collector Current - - - - E E off on Ω 15V 400V 125ºC, 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance d(off 125º ...

Page 6

... Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. 50 110 100 60A 30A 15A 105 115 125 IXGH48N60C3D1 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current - - - - d(on Ω 15V 400V CE 25ºC < TJ < 125º Amperes IXYS REF: G_48N60C3D1(5D)01-23-09-B ...

Page 7

... Fig. 22. Reverse recovery charge Q F versus -di / 100° 300V 60A 30A 15A 160 0 200 400 600 -di / Fig. 25. Recovery time t RM -di /dt F 0.01 0.1 t IXGH48N60C3D1 100° 300V 60A 30A 15A 1000 0 200 400 A/μs /dt F Fig. 23. Peak reverse current I r versus - 100° 30A V F ...

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