IXDA20N120AS IXYS, IXDA20N120AS Datasheet
Manufacturer Part Number
IXDA20N120AS
Description
IGBT 1200V 34A TO-263AB
Specifications of IXDA20N120AS
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.4V @ 15V, 20A
Current - Collector (ic) (max)
34A
Power - Max
200W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
38A
Gate To Emitter Voltage (max)
±20V
Pin Count
2 +Tab
Mounting
Surface Mount
Operating Temperature (min)
-55
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
38
Ic90, Tc=90°c, Igbt, (a)
25
Vce(sat), Max, Tj=25°c, Igbt, (v)
3
Tfi, Typ, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.4
Rthjc, Max, Igbt, (°c/w)
0.63
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
TO-263 (D2 PAK)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXDA20N120AS
High Voltage IGBT
Short Circuit SOA Capability
Square RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
IGBT
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
CES
GES
C25
C90
CM
SC
d(on)
r
d(off)
f
GE(th)
GES
CE(sat)
on
off
CES
CEK
tot
ies
thJC
Gon
Conditions
T
T
T
V
RBSOA, clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
Inductive load; T
V
V
V
V
C
C
VJ
C
C
GE
C
CE
CE
CE
GE
CE
CE
CE
= 20 A; V
= 0.6 mA; V
= 25°C
= 90°C
= 25°C
= 25°C to 150°C
= V
= 0 V
= 600 V; I
= ±15 V; R
= 25 V; V
= 600 V; V
= 15 V; R
= V
CES
CES
;
;
; V
V
GE
GE
GE
GE
V
G
C
= 15 V; T
GE
= ± 20 V
GE
GE
G
= 82 W; T
= 0 V; T
= 20 A
= 0 V; f = 1 MHz
= 82 W
= V
VJ
= 15 V; I
= ±15 V; R
= 125°C
CE
T
T
VJ
VJ
VJ
VJ
VJ
C
= 125°C
= 18 A
= 25°C
= 125°C
= 25°C
= 125°C
G
= 82 W; T
(T
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
4.5
Characteristic Values
1000
typ.
Maximum Ratings
100
500
2.4
2.6
0.8
3.1
2.4
75
70
70
1
max.
1200
0.63
V
200
±20
200
3.0
6.5
0.8
CES
38
25
35
10
TAB
3
K/W
mA
mA
mJ
mJ
nC
nA
pF
µs
W
ns
ns
ns
ns
V
V
A
A
A
V
V
V
I
V
V
Features
• NPT IGBT
• TO-263 package
Applications
• drives
• power supplies
C25
- low saturation voltage
- positive temperature coefficient for
- SMD assembly
- industry standard outline
- switched mode power supplies
- uninterruptible power supplies
CES
CE(sat) typ
easy paralleling
IXDA 20N120AS
=
= 1200 V
= 2.4 V
38 A
20110118a
TAB
h
1 - 5
Related parts for IXDA20N120AS
IXDA20N120AS Summary of contents
... E off MHz ies 600 Gon thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 1 Maximum Ratings 1200 ±20 = 125° 125° 200 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. ...
... Component Symbol Conditions stg Symbol Conditions Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved Maximum Ratings -55...+150 -55...+125 Characteristic Values min. typ. max Supplier Option IXDA 20N120AS °C °C g Millimeter Inches Dim. ...
... V [V] GE Fig. 3 Typ. transfer characteristics 600 [ [nC] G Fig. 4 Typ. turn on gate charge IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved V = 17V GE 15V 13V 11V I C [A] 9V 2.5 3.0 3 IXDA 20N120AS 125° ...
... J V < V CEK CES 15 [ 200 400 600 800 V [V] CE Fig. 9 Reverse biased safe operating area RBSOA IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 5 140 120 4 100 off V = 600V ±15V 60 [mJ [ns 82Ω ...
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