IRG4PH50KDPBF International Rectifier, IRG4PH50KDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PH50KDPBF
• Description: IGBT W/DIODE 1200V 45A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PH50KDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 24A
• Current - Collector (ic) (max): 45A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 2800 pF
• Current, Collector: 45 A
• Energy Rating: 5.73 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 4 to 20 kHz
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3.28 V
• Dc Collector Current: 45A
• Collector Emitter Voltage Vces: 1.2kV
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PH50KDPBF

Switching Characteristics @ T
IRG4PH50KDPbF
Electrical Characteristics @ T
V
∆V
V
V
∆V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
rr
rr
fe
E
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ge
gc
ies
oes
res
g
rr
(rec)M
(BR)CES
GE(th)
2
/dt
/∆T
/∆T
J
J
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
13
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2800
0.91
2.77
3.28
2.54
3.83
1.90
5.73
8.36
390
180
100
140
200
310
140
164
260
680 1838
120
-10
2.5
2.1
5.8
8.3
—
—
19
—
—
—
25
70
87
—
67
72
13
53
90
76
6500
±100
250
270
110
300
300
135
245
675
3.5
6.0
3.5
3.0
7.9
38
—
—
10
15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
nC
ns
µs
ns
pF
ns
V
V
S
V
A
Energy losses include "tail"
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
V
T
I
V
and diode reverse recovery
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
J
GE
CC
GE
J
GE
GE
CC
J
J
J
J
J
J
J
J
= 24A
= 45A
= 24A, T
= 16A
= 16A, T
= 24A
= 24A, V
= 24A, V
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= V
= V
= 100V, I
= 0V, I
= 0V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 720V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
See Fig.
See Fig.
Conditions
= 150°C
= 150°C
Conditions
= 250µA
= 1.0mA
See Fig.
See Fig.
G
G
G
C
= 250µA
= 250µA
J
= 800V
= 800V
= 1200V
= 1200V, T
= 5.0Ω
= 5.0Ω
= 5.0Ω,
= 24A
= 125°C
14
15
17
16
See Fig. 10,11,18
See Fig.8
See Fig. 7
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
V
GE
I
R
J
F
= 150°C
= 200V
= 16A
= 15V