IRG4PH50UDPBF International Rectifier, IRG4PH50UDPBF Datasheet - Page 2

• Manufacturer Part Number: IRG4PH50UDPBF
• Description: IGBT W/DIODE 1200V 45A TO247AC
• Manufacturer: International Rectifier
• Type: Ultrafastr

Specifications of IRG4PH50UDPBF

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 24A
• Current - Collector (ic) (max): 45A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Capacitance, Gate: 3600 pF
• Current, Collector: 45 A
• Energy Rating: 3.6 mJ
• Package Type: TO-247AC
• Polarity: N-Channel
• Power Dissipation: 200 W
• Resistance, Thermal, Junction To Case: 0.64 °C/W
• Speed, Switching: 40 kHz (Hard Switching), >200 kHz (Resonant Mode)
• Transistor Type: NPN
• Voltage, Collector To Emitter Shorted: 1200 V
• Voltage, Collector To Emitter, Saturation: 3.2 V
• Package: TO-247
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 1200
• Ic @ 25c (a): 45
• Ic @ 100c (a): 24
• Vce(on)@25c Typ (v): 2.78
• Vce(on)@25c Max (v): 3.70
• Ets Typ (mj): 3.6
• Ets Max (mj): 4.1
• Qrr Typ Nc 25c: 260
• Qrr Max Nc 25c: 675
• Vf Typ: 2.50
• Pd @25c (w): 200
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: RoHS Compliant part Electrostatic Device
• Other names: *IRG4PH50UDPBF

IRG4PH50UDPbF
Switching Characteristics @ T
Electrical Characteristics @ T
V
∆V
V
V
∆V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
E
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
gc
rr
(rec)M
(BR)CES
2
GE(th)
/dt
/∆T
/∆T
J
J
Gate - Emitter Charge (turn-on)
Collector-to-Emitter Breakdown VoltageS
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance T
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
1200
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
23
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3600
1.20
2.56
2.78
3.20
2.54
2.10
1.50
3.60
6.38
160
110
180
240
330
160
164
260
680 1838
120
-13
2.5
2.1
5.8
8.3
35
27
53
47
24
46
27
13
31
90
76
—
—
—
—
—
6500
±100
250
250
170
260
135
245
675
3.5
3.7
6.0
3.5
3.0
4.6
40
80
10
15
—
—
—
—
— mV/°C V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
nC
pF
V
V
S
V
ns
ns
ns
A
V
V
I
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
T
I
V
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
GE
GE
CC
= 24A, T
= 16A, T
= 24A, V
= 24A, V
= 20A
= 24A
= 45A
= 16A
= 24A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 100V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
J
J
C
C
CC
CC
CE
CE
C
C
See Fig.
See Fig.
= 150°C
= 150°C
Conditions
Conditions
See Fig.
See Fig.
= 250µA
= 1.0mA
G
G
C
= 250µA
= 250µA
= 800V
= 800V
= 1200V
= 1200V, T
See Fig. 11, 18
= 24A
= 5.0Ω
= 5.0Ω
14
15
17
16
See Fig. 8
See Fig. 7
di/dt = 200A/µs
V
See Fig. 2, 5
See Fig. 13
V
GE
R
I
J
F
= 150°C
= 200V
= 16A
= 15V