IXGT15N120CD1 IXYS, IXGT15N120CD1 Datasheet - Page 2

• Manufacturer Part Number: IXGT15N120CD1
• Description: IGBT 30A 1200V TO-268
• Manufacturer: IXYS

Specifications of IXGT15N120CD1

• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.8V @ 15V, 15A
• Current - Collector (ic) (max): 30A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 30A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 30
• Ic90, Tc=90°c, Igbt, (a): 15
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.8
• Tfi, Typ, Tj=25°c, Igbt, (ns): 115
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 15
• Rthjc, Max, Diode, (ºc/w): 1.6
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant

© 2000 IXYS All rights reserved
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
V
I
I
t
t
R
Notes:
F
RM
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
rr
rr
fs
off
on
off
F
oes
thJC
thCK
thJC
ies
res
g
ge
gc
1.
2.
TO-247
Inductive load, T
I
V
Note 1
Inductive load, T
I
V
Note 1.
Test Conditions
I
Note 2.
V
I
Test Conditions
I
I
T
T
I
V
I
higher T
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Switching times may increase for V
C
C
C
C
F
F
F
F
CE
CE
C
C
CE
GE
= I
= I
= 20 A, V
= 20 A, V
= 20 A; -di
= 1 A; -di
= I
= 25°C
= 90°C
= 0.8 V
= 25 V, V
= 0.8 V
= 0 V; T
C90
C90
= I
C90
; V
; V
, V
C90
J
or increased R
GE
; V
GE
GE
CES
CES
GE
GE
F
= 15 V
F
J
= 15 V
= 15 V, V
/dt = 100 A/ms; V
CE
/dt = 400 A/ms, V
GE
= 125°C
; R
; R
= 0 V
= 0 V, T
= 10 V,
= 0 V, f = 1 MHz
G
G
J
J
= R
= R
= 125°C
= 25°C
CE
off
off
J
= 125°C
= 10 W
= 10 W
G
= 0.5 V
.
R
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
R
= 30 V,V
(T
(T
CES
= 600 V
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
CE
15N120CD1
15N120CD1
15N120CD1
15N120CD1
15N120BD1
15N120BD1
15N120BD1
15N120BD1
(Clamp) > 0.8 • V
GE
4,881,106
4,931,844
= 0 V
min.
min.
12
Characteristic Values
Characteristic Values
5,017,508
5,034,796
1700
IXGH 15N120BD1
IXGH 15N120CD1
typ.
1.75
1.05
0.25
typ.
200
155
150
160
115
270
360
250
2.6
2.1
1.5
3.5
2.1
15
40
15
38
69
13
26
25
15
25
18
CES
,
max.
max.
0.83 K/W
K/W
5,049,961
5,063,307
280
320
190
2.8
1.6 K/W
3.0 mJ
1.6 mJ
33
20
mJ
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
V
V
V
A
5,187,117
5,237,481
TO-247 AD (IXGH) Outline
Recommended
Footprint
TO-268AA (D
Min.
5,486,715
5,381,025
Dim.
Dim. Millimeter
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
A
B
C
D
E
F
G
H
J
K
L
M
N
2
1
2
1
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
15.75 16.26 0.610 0.640
13.80 14.00
15.85 16.05
18.70 19.10
Min. Max.
3.55 3.65 0.140 0.144
4.32 5.49 0.170 0.216
1.65 2.13 0.065 0.084
10.8 11.0 0.426 0.433
1.15
13.3
2.40
1.20
1.00
3.80
Min.
5.4
1.0
4.7
0.4
1.5 2.49 0.087 0.102
Millimeter
5.45 BSC
4.9
2.7
.02
1.9
IXGT 15N120BD1
IXGT 15N120CD1
0.25 BSC
.4
-
3
PAK)
Max.
6.2 0.212 0.244
4.5 -
1.4 0.040 0.055
5.3 0.185 0.209
0.8 0.016 0.031
1.45
13.6
2.70
1.40
1.15
4.10
5.1
2.9
.25
2.1
.65
Min.
Inches
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min. Max.
.75
Inches
.215 BSC
.010 BSC
0.177
Max.
.201
.114
.010
.057
.026
.551
.632
.535
.752
.106
.055
.045
.161
.83
2 - 2