IXBH10N170 IXYS, IXBH10N170 Datasheet
IXBH10N170
Specifications of IXBH10N170
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IXBH10N170 Summary of contents
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... V GE(th Temperature Coefficent 0.8 V CES CE CES ±20 V GES CE(sat) C C90 GE © 2003 IXYS All rights reserved IXBH 10N170 IXBT 10N170 Maximum Ratings 1700 = 1 MΩ 1700 GE ±20 ± Ω 1350 CES 140 -55 ... +150 150 -55 ... +150 300 260 1.13/10Nm/lb.in. Characteristic Values (T = 25° ...
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... - C90 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 4.0 6.5 700 ...
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... V - Volts C E Fig. 3. Output Characteristics @ 125 Deg Volts C E Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emiiter voltage Volts G E © 2003 IXYS All rights reserved 0.8 0 º 7 2 20A IXBH 10N170 IXBT 10N170 Fig. 2. Extended Output Characteristics @ 25 deg Volts C E Fig. 4. Temperature Dependence of V ...
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... Ohms G Fig. 11. Dependence lid lines - Ohms G Dashed lines - Ohms 360V Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents 2 7 off 20A Temperature off 20A ...
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... Fig. 12. Capacitance 1 000 oes C res Volts C E © 2003 IXYS All rights reserved 1 0 0.8 0.7 0.6 0.5 0.4 0.3 0 IXBH 10N170 IXBT 10N170 Fig. 13. Maximum Transient Thermal Resistance Pulse Width - milliseconds 1 000 ...