IXGH72N60A3 IXYS, IXGH72N60A3 Datasheet

no-image

IXGH72N60A3

Manufacturer Part Number
IXGH72N60A3
Description
IGBT 600V TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH72N60A3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.35V @ 15V, 60A
Current - Collector (ic) (max)
75A
Power - Max
540W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
72
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.35
Tfi, Typ, Tj=25°c, Igbt, (ns)
250
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.5
Rthjc, Max, Igbt, (°c/w)
0.23
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
Ultra Low Vsat PT IGBT for
up to 5kHz switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C unless otherwise specified)
Test Conditions
I
I
V
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ ≤ 600V
T
1.6mm (0.062 in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-247)
TO-247
TO-268
C
C
C
TM
C
J
C
C
C
C
CE
GE
CE
GE
= 250μA, V
= 60A, V
= 250μA, V
= 25°C to 150°C, R
= 25°C to 150°C
= 25°C
= 0V, V
= 25°C (limited by leads)
= 110°C
= V
= 0V
= 15V, T
= 25°C, 1ms
600V IGBT
CES
GE
GE
VJ
GE
CE
= 15V, Note 1
= ± 20V
= 125°C, R
= 0V
= V
GE
GE
= 1M
G
T
= 3
J
Ω
= 125°C
Ω
IXGH72N60A3
IXGT72N60A3
-55 ... +150
-55 ... +150
600
Characteristic Values
3.0
I
Min.
CM
1.13/10
Maximum Ratings
= 150
± 20
± 30
600
600
400
540
150
300
260
75
72
6
4
Typ.
Max.
±100
1.35
750
Nm/lb.in.
5.0
75
μA
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
A
A
A
A
g
g
TO-247 (IXGH)
TO-268 (IXGT)
V
I
V
t
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for low conduction losses
Square RBSOA
International standard packages
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
CES
CE(sat)
G
C
G
≤ ≤ ≤ ≤ ≤ 1.35V
= 600V
= 72A
= 250ns
E
E
C
TAB = Collector
DS99759B(07/08)
= Collector
C (TAB)
C (TAB)

Related parts for IXGH72N60A3

IXGH72N60A3 Summary of contents

Page 1

... V GE(th CES CE CES 0V ± 20V GES 60A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved IXGH72N60A3 IXGT72N60A3 Maximum Ratings 600 Ω 600 ± 20 ± 400 Ω 150 G CM 540 -55 ... +150 150 -55 ... +150 300 260 1.13/ Characteristic Values Min. ...

Page 2

... V 40 CES 1.38 320 250 3 2.6 510 375 6.5 0.15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH72N60A3 IXGT72N60A3 TO-247 AD Outline Max Terminals Gate ns Dim. Millimeter ns Min 4 1.65 1 ...

Page 3

... V = 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V GE -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 125ºC J 25ºC - 40º 4.0 4.5 5.0 5.5 6.0 6 Volts GE IXGH72N60A3 IXGT72N60A3 CE(sat 120A 60A 30A C 75 100 125 150 7.0 7.5 8.0 ...

Page 4

... 60A 100 120 140 160 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area 125º 3Ω < 10V / ns 0 100 150 200 250 300 350 400 450 V - Volts CE 0.1 1 IXGH72N60A3 IXGT72N60A3 180 200 220 240 500 550 600 650 10 IXYS REF: G_72N60A3 (76)3-25-08-B ...

Page 5

... C 360 105 115 125 400 610 380 570 360 530 340 490 320 450 300 410 280 370 260 330 240 290 220 250 100 IXGH72N60A3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off 3Ω 15V 480V 125º Amperes C Fig ...

Page 6

... IXYS reserves the right to change limits, test conditions and dimensions. 90 120 110 80 100 25A d(on) Ω 15V 480V 25A 105 115 125 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 3Ω 15V 480V Amperes C IXGH72N60A3 IXGT72N60A3 25º 125º 100 IXYS REF: G_72N60A3 (76)3-25-08-B ...

Related keywords