IXGT15N120B IXYS, IXGT15N120B Datasheet
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IXGT15N120B
Specifications of IXGT15N120B
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IXGT15N120B Summary of contents
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... 250 GE(th CES CE CES GES CE(sat) C C90 GE © 2002 IXYS All rights reserved IXGH 15N120B IXGT 15N120B Maximum Ratings 1200 = 1 M 1200 0.8 V CES 180 -55 ... +150 150 -55 ... +150 300 260 1.13/10Nm/lb.in. TO-247 AD TO-268 Characteristic Values ( unless otherwise specified) J min. typ. max. ...
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... T or increased off R thJC R (TO-247) thCK Min Recommended Footprint IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max 1720 ...
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... Fig. 3. Saturation Voltage Characteristics @ 125 125 15V GS 13V 11V Volts CE Fig. 5. Admittance Curves - © 2002 IXYS All rights reserved 10000 o = 125 C 1000 Volts IXGH IXGT Fig. 2. Extended Output Characteristics 150 V = 15V 125 13V 100 11V Volts CE Fig. 4. Temperature Dependence of V 1.6 V ...
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... D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 0.01 Single pulse 0.001 0.00001 0.0001 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents Fig. 8. Dependence of E OFF (OFF ...