IXGH16N170A IXYS, IXGH16N170A Datasheet - Page 5

• Manufacturer Part Number: IXGH16N170A
• Description: IGBT 1700V 16A TO-247
• Manufacturer: IXYS

Specifications of IXGH16N170A

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 5V @ 15V, 11A
• Current - Collector (ic) (max): 16A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.7kV
• Collector Current (dc) (max): 16A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1700
• Ic25, Tc=25°c, Igbt, (a): 16
• Ic90, Tc=90°c, Igbt, (a): 8
• Vce(sat), Max, Tj=25°c, Igbt, (v): 5
• Tfi, Typ, Igbt, (ns): 40
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.1
• Rthjc, Max, Igbt, (°c/w): 0.65
• If, Tc=90°c, Diode, (a): -
• Rthjc, Max, Diode, (k/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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10000
1000
250
225
200
175
150
125
100
100
75
50
0.1
10
1
25
0
1
t
t
R
V
V
Sw itching Tim e on Tem perature
d(off)
fi
35
Fig. 13. Dependence of Turn-off
GE
CE
G
f = 1 MHz
5
- - - - - -
= 10Ω
= 15V
= 850V
45
Fig. 15. Capacitance
T
10
J
55
- Degrees Centigrade
I
C
15
V
65
= 16A
C E
C
75
20
- Volts
I
res
C
= 32A
C
85
oes
Fig. 17. Maxim um Transient Therm al Resistance
I
C
25
C
ies
= 8A
95
30
105 115 125
1 0
35
Pulse Width - milliseconds
40
45
40
35
30
25
20
15
10
5
0
16
14
12
10
100
8
6
4
2
0
0
T
R
dV/dT < 10V/ns
300
J
V
I
I
10
G
C
G
CE
Fig. 16. Reverse-Bias Safe
= 125
= 10Ω
= 8A
= 1 0mA
= 850V
1 00
IXGH/IXGT 16N170AH1
500
20
Fig. 14. Gate Charge
º
C
Operating Area
Q
IXGH/IXGT 16N170A
30
700
G
V
- nanoCoulombs
C E
40
900
- Volts
50
1100 1300 1500 1700
60
70
80
1 000
90