IXGR50N60B2D1 IXYS, IXGR50N60B2D1 Datasheet
IXGR50N60B2D1
Specifications of IXGR50N60B2D1
Related parts for IXGR50N60B2D1
IXGR50N60B2D1 Summary of contents
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... V GE(th CES CE CES ±20 V GES CE(sat Note 1 © 2004 IXYS All rights reserved IXGR 50N60B2 IXGR 50N60B2D1 IXGR_B2 Maximum Ratings 600 = 1 MΩ 600 GE ±20 ± 300 = 10 Ω 100 G CM ≤ 600 V CE 200 -55 ... +150 150 -55 ... +150 2500 g 300 Characteristic Values (T = 25° ...
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... DCB substrate. thJ-DCB the thermal resistance junction-to-external side of DCB substrate. thJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
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... Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 3.7 3.4 3 80A C 2.8 40A 20A 2.5 2.2 1.9 1.6 1 Volts G E © 2004 IXYS All rights reserved Fig. 2. Extended Output Characte ristics 320 9V 280 240 7V 200 160 120 2.5 3 1.4 9V 1.3 1.2 7V 1.1 1 ...
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... GE 500 V = 480V 40A 80A C 100 Ohms G IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4.5 3.5 2.5 1.5 0.5 C 3.5 2.5 1 25º 400 350 ...
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... 40A 10mA nanoCoulombs © 2004 IXYS All rights reserved I = 20A 40A 105 115 125 10000 1000 100 90 120 150 Fig . 17. M axim tan Puls e W idth - millis ec onds IXGR 50N60B2 IXGR 50N60B2D1 Fig. 14. Reverse -Bias Safe Operating Are º 125 ...
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... K/W 0.1 Z thJC 0.01 0.001 0.0001 0.00001 0.0001 0.001 Fig. 24 Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4000 T = 100° 300V nC R ...