IXGK50N60B2D1 IXYS, IXGK50N60B2D1 Datasheet - Page 6

• Manufacturer Part Number: IXGK50N60B2D1
• Description: IGBT 600V 75A FRD TO-264
• Manufacturer: IXYS
• Series: HiPerFAST™, Lightspeed 2™r

Specifications of IXGK50N60B2D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 400W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 50
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 65
• Eoff, Typ, Tj=125°c, Igbt, (mj): 1.55
• Rthjc, Max, Igbt, (°c/w): 0.25
• If, Tj=110°c, Diode, (a): 48
• Rthjc, Max, Diode, (ºc/w): 0.65
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
Fig. 18. Forward current I
Fig. 21. Dynamic parameters Q
Fig. 24. Transient thermal resistance junction to case
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
0.0001
I
0.001
Z
F
K
0.01
K/W
thJC
160
140
120
100
f
2.0
1.5
1.0
0.5
0.0
0.1
A
0.00001
80
60
40
20
0
1
0
0
versus T
T
40
T
T
VJ
VJ
VJ
I
RM
Q
=150°C
= 25°C
=100°C
r
VJ
1
0.0001
80
F
T
versus V
VJ
V
120
F
2
r
, I
°C
RM
0.001
V
F
160
4,850,072
4,835,592
Q
t
r
rr
Fig. 19. Reverse recovery charge Q
Fig. 22. Recovery time t
4000
3000
2000
1000
140
130
120
110
100
nC
ns
90
80
4,931,844
4,881,106
0
100
0.01
0
T
V
VJ
R
versus -di
= 100°C
= 300V
200
5,034,796
5,017,508
400
I
I
I
F
F
F
=120A
= 60A
= 30A
F
/dt
0.1
I
I
I
F
F
F
5,049,961
5,063,307
=120A
= 60A
= 30A
-di
600
F
-di
rr
/dt
T
V
versus -di
VJ
t
F
R
/dt
= 100°C
= 300V
A/µs
s
800
A/µs
DSEP 60-06A
5,237,481
5,187,117
1000
1000
1
F
/dt
r
5,381,025
5,486,715
I
V
RM
Note: Fig. 18 through Fig. 23 show
typical values
Fig. 20. Peak reverse current I
FR
Constants for Z
Fig. 23. Peak forward voltage V
t
fr
80
60
40
20
20
15
10
A
1
2
3
0
V
5
0
i
6,306,728B1
0
0
6,404,065B1
t
T
I
T
V
fr
F
VJ
VJ
R
= 100°C
= 60A
= 100°C
= 300V
200
200
versus -di
versus di
IXGK 50N60B2D1
IXGX 50N60B2D1
R
0.324
0.125
0.201
I
I
I
F
F
F
=120A
= 60A
= 30A
thi
6,162,665
6,259,123B1 6,306,728B1 6,683,344
400
400
thJC
(K/W)
F
calculation:
/dt
F
/dt
600
600
di
-di
6,534,343
V
F
/dt
F
FR
/dt
A/µs
A/µs
800
800
t
0.0052
0.0003
0.0385
i
(s)
RM
1000
1000
FR
6,583,505
and
1.6
1.2
0.8
0.4
0.0
µs
t
fr