IXGH40N120A2 IXYS, IXGH40N120A2 Datasheet
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Manufacturer Part Number
IXGH40N120A2
Description
IGBT 1200V 75A TO-247
Specifications of IXGH40N120A2
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
360W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.0
Tfi, Typ, Tj=25°c, Igbt, (ns)
800
Eoff, Typ, Tj=125°c, Igbt, (mj)
35
Rthjc, Max, Igbt, (°c/w)
0.35
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
IXGH40N120A2
High Voltage IGBT
Low V
Preliminary Data Sheet
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
V
V
I
I
V
© 2005 IXYS All rights reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CES
GES
GEM
C
GE(th)
GE(th)
CE(sat)
d
J
= 25°C unless otherwise specified)
CE(sat)
I
I
V
V
V
I
C
C
C
CE
GE
CE
Test Conditions
= 1 mA, V
= 250 μA, V
= I
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load, V
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 seconds
Plastic body for 10 seconds
Mounting torque (ixgh)
= 0 V, V
J
J
C
C
J
C
GE
= V
= 0 V
C110
= 25°C to 150°C
= 25°C to 150°C
= 25°C, IGBT chip capability
= 110°C
≤ 150°C, tp < 300 μs
= 25°C
= 15 V, T
CES
, V
GE
GE
GE
= 15V
CE
= ±20 V
= 0 V
VJ
= V
= 150°C, R
(IXGH)
(IXGT)
GE
CE
G
= 5 Ω
< 960 V
IXGH 40N120A2
IXGT 40N120A2
T
J
= 125°C
Characteristic Values
1200
Min.
3.0
Maximum Ratings
1200
1200
± 20
± 30
75
40
160
360
-55 ... +150
150
-55 ... +150
300
260
1.3/10
6.0
4.0
I
CM
Typ.
= 80
± 100 nA
Nm/lb.in.
Max.
5.0 V
2.0 V
50 μA
1mA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
g
g
G = Gate
E = Emitter
Features
•
•
•
Applications
•
•
•
•
•
•
International standard packages
Low V
- for minimum on-state conduction
MOS Gate turn-on
- drive simplicity
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Capacitor discharge
losses
TO-268 (IXGT)
V
I
V
TO-247 (IXFH)
C25
CES
CE(sat)
G
CE(sat)
C
E
C = Collector
TAb = Collector
G
IXGH 40N120A2
IXGT 40N120A2
= 1200 V
=
≤ ≤ ≤ ≤ ≤
E
2.0 V
DS99509 (12/05)
75 A
(TAB)
C (TAB)
Related parts for IXGH40N120A2
IXGH40N120A2 Summary of contents
... GE(th CES CE CES ±20 V GES 15V CE(sat) C C110 GE © 2005 IXYS All rights reserved IXGH 40N120A2 IXGT 40N120A2 Maximum Ratings 1200 1200 ± 20 ± 160 = 5 Ω < 960 V CE 360 -55 ... +150 150 -55 ... +150 300 260 1.3/10 Nm/lb.in. 6.0 4.0 Characteristic Values Min. ...
... IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS reserves the right to change limits, test conditions and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 ...
... Volts CE Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 5.5 5.0 4 80A C 4.0 40A 20A 3.5 3.0 2.5 2.0 1.5 1 Volts GE © 2005 IXYS All rights reserved 300 V = 15V GE 270 13V 11V 240 210 9V 180 150 7V 120 1.6 2 2.4 2.8 1 15V GE 13V 1.5 11V 1 ...
... CE 105 Ohms G IXYS reserves the right to change limits, test conditions and dimensions. Fig. 8. Inductive Turn-off Switching Times vs. 2000 1900 1800 1700 1600 1500 1400 1300 120 150 180 210 Fig. 10. Inductive Turn-off Switching Times vs. 1000 2000 900 1800 - - - - ...
... Fig. 13. Inductive Turn-on Switching Times vs. Junction Temperature 110 100 I = 80A 40A 20A Degrees Centigrade J Fig. 15. Capacitance 10,000 MHz 1,000 100 Volts CE 1.00 0.10 0.01 0.0001 0.001 © 2005 IXYS All rights reserved d(on) 22 Ω 15V 960V 105 115 125 ies oes res Fig ...
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