IRG4PC50WPBF International Rectifier, IRG4PC50WPBF Datasheet
IRG4PC50WPBF
Manufacturer Part Number
IRG4PC50WPBF
Description
IGBT WARP 600V 55A TO247AC
Manufacturer
International Rectifier
Type
Warpr
Specifications of IRG4PC50WPBF
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 27A
Current - Collector (ic) (max)
55A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Capacitance, Gate
3700 pF
Current, Collector
55 A
Energy Rating
170 mJ
Package Type
TO-247AC
Polarity
N-Channel
Power Dissipation
200 W
Resistance, Thermal, Junction To Case
0.64 °C/W
Speed, Switching
150 kHz (Hard Switching), >300 kHz (Resonant Mode)
Transistor Type
NPN
Voltage, Collector To Emitter Shorted
600 V
Voltage, Collector To Emitter, Saturation
2.25 V
Dc Collector Current
55A
Collector Emitter Voltage Vces
600V
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
*IRG4PC50WPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRG4PC50WPBF
Manufacturer:
FUJI
Quantity:
6 000
Part Number:
IRG4PC50WPBF
Manufacturer:
IR
Quantity:
20 000
Benefits
Absolute Maximum Ratings
Thermal Resistance
Features
Features
Features
Features
Features
• Lower switching losses allow more cost-effective
• Of particular benefit to single-ended converters and
• Low conduction losses and minimal minority-carrier
• Designed expressly for Switch-Mode Power
• Industry-benchmark switching losses improve
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
www.irf.com
C
C
CM
LM
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
boost PFC topologies 150W and higher
recombination make these an excellent option for
resonant mode switching as well (up to >300 kHz)
Supply and PFC (power factor correction)
applications
efficiency of all power supply topologies
tighter parameters distribution, exceptional reliability
J
STG
CES
GE
ARV
D
D
θJC
θCS
θJA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm from case )
6 (0.21)
Typ.
0.24
–––
–––
E
C
10 lbf•in (1.1N•m)
IRG4PC50W
-55 to + 150
TO-247AC
Max.
± 20
600
220
220
170
200
55
27
78
V
@V
CE(on) max.
Max.
V
GE
0.64
–––
–––
40
CES
= 15V, I
= 600V
= 2.30V
C
2/7/2000
Units
= 27A
Units
g (oz)
°C/W
mJ
W
°C
V
A
V
1
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IRG4PC50WPBF Summary of contents
Page 1
Features Features Features Features Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses ...
Page 2
IRG4PC50W Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)CES ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. ...
Page 3
ve Ide 0.1 ...
Page 4
IRG4PC50W 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL ...
Page 5
1MHz ies res oes ce gc 6000 C ies 4000 C oes 2000 ...
Page 6
IRG4PC50W 3.0 Ω Ohm 5 150 C ° 480V 15V GE 2.0 1.0 0 Collector-to-emitter Current (A) C Fig Typical ...
Page 7
L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...
Page 8
IRG4PC50W Case Outline and Dimensions — TO-247AC (. (. (. ...
Page 9
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...