IRGP4063-EPBF International Rectifier, IRGP4063-EPBF Datasheet

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IRGP4063-EPBF

Manufacturer Part Number
IRGP4063-EPBF
Description
IGBT N-CH 600V 96A TO-247AD
Manufacturer
International Rectifier
Datasheet

Specifications of IRGP4063-EPBF

Igbt Type
Trench
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.14V @ 15V, 48A
Current - Collector (ic) (max)
96A
Power - Max
330W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
• Low V
• Low switching losses
• Maximum Junction temperature 175 °C
• 5 µS short circuit SOA
• Square RBSOA
• 100% of the parts tested for I
• Positive V
• Tight parameter distribution
• Lead Free Package
Benefits
• High Efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
• Rugged transient Performance for increased reliability
• Excellent Current sharing in parallel operation
• Low EMI
1
V
I
I
I
I
V
P
P
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR
C
C
CM
LM
J
STG
CES
GE
D
D
θJC
θCS
θJA
Low V
@ T
@ T
@ T
@ T
(IGBT)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE (ON)
CE (ON)
CE (ON)
and Low Switching losses
Trench IGBT Technology
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Temperature co-efficient
LM

GE
Parameter
Parameter
= 15V
GE
= 20V
c
G
n-channel
E
C
Min.
300 (0.063 in. (1.6mm) from case)
–––
–––
–––
Gate
IRGP4063-EPbF
IRGP4063PbF
G
C
TO-247AC
10 lbf·in (1.1 N·m)
IRGP4063PbF
-55 to +175
G C
t
SC
Max.
Typ.
0.24
600
144
192
±20
±30
330
170
–––
96
48
80
E
I
V
Collector
C
≥ 5µs, T
CE(on)
= 48A, T
C
V
CES
typ. = 1.65V
Max.
IRGP4063-EPbF
0.45
–––
–––
J(max)
= 600V
C
C
TO-247AD
= 100°C
www.irf.com
Emitter
= 175°C
G C
E
Units
Units
06/30/09
°C/W
°C
W
E
V
A
A
V

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IRGP4063-EPBF Summary of contents

Page 1

... T = 100° ≥ 5µ 175°C SC J(max) V typ. = 1.65V E CE(on TO-247AC TO-247AD IRGP4063PbF IRGP4063-EPbF G C Gate Collector Emitter Max. 600 96 48 144 192 ±20 ±30 330 170 -55 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Min. Typ. ...

Page 2

... IRGP4063PbF/IRGP4063-EPbF Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES ∆V /∆T Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆TJ Threshold Voltage temp. coefficient GE(th) gfe Forward Transconductance I Collector-to-Emitter Leakage Current ...

Page 3

... C J 200 180 160 140 120 100 (V) Fig Typ. IGBT Output Characteristics T = -40° 80µs J www.irf.com IRGP4063PbF/IRGP4063-EPbF 1000 10µsec 100µsec 1msec DC 100 1000 =15V 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8. Fig Typ. IGBT Output Characteristics 350 300 250 ...

Page 4

... IRGP4063PbF/IRGP4063-EPbF 200 18V 180 VGE = 15V 160 VGE = 12V VGE = 10V 140 VGE = 8.0V 120 100 (V) Fig Typ. IGBT Output Characteristics T = 175° 80µ (V) Fig Typical 25°C J 200 180 25°C 160 175°C 140 120 100 (V) Fig Typ. Transfer Characteristics V = 50V 10µs ...

Page 5

... OFF t R 100 Ω ) Fig Typ. Switching Time vs 175° 200µ 400V 10000 1000 100 (V) Fig Typ. Capacitance vs 0V 1MHz GE www.irf.com IRGP4063PbF/IRGP4063-EPbF 60 80 100 175° 200µ 10Ω 15V 100 125 G = 48A 15V CE GE Cies Coes Cres 60 80 100 ...

Page 6

... IRGP4063PbF/IRGP4063-EPbF 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 0.0001 1E-006 1E-005 Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT τ J τ J τ τ τ 1 τ τ Ci= τi/Ri Ci i/Ri 0.0001 0.001 0. Rectangular Pulse Duration (sec) Ri (°C/W) τi (sec) ...

Page 7

... DUT 0 1K Fig.C.T.1 - Gate Charge Circuit (turn-off) 4X DUT SCSOA Fig.C.T.3 - S.C. SOA Circuit R = VCC ICM DUT Rg Fig.C.T.5 - Resistive Load Circuit www.irf.com IRGP4063PbF/IRGP4063-EPbF VCC diode clamp / DUT DC VCC Fig.C.T.4 - Switching Loss Circuit VCC G force DUT VCC Rg Fig.C.T.2 - RBSOA Circuit L -5V DUT / VCC ...

Page 8

... IRGP4063PbF/IRGP4063-EPbF 700 600 500 400 tf 300 90 200 100 Loss OFF -100 -0.40 0.10 0.60 Time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C using Fig. CT 600 140 120 500 100 400 80 300 60 200 40 100 -20 -100 1.10 6.20 Fig. WF2 - Typ. Turn-on Loss Waveform ...

Page 9

... TO-247AC package is not recommended for Surface Mount Application. www.irf.com IRGP4063PbF/IRGP4063-EPbF 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & 9 ...

Page 10

... IRGP4063PbF/IRGP4063-EPbF TO-247AD package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 10 "$C $% $& Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR’s Web site. ...

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