IXSH25N120A IXYS, IXSH25N120A Datasheet
IXSH25N120A
Manufacturer Part Number
IXSH25N120A
Description
IGBT 1200V 50A SCSOA TO-247AD
Manufacturer
IXYS
Datasheet
1.IXSH25N120A.pdf
(2 pages)
Specifications of IXSH25N120A
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 25A
Current - Collector (ic) (max)
50A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Igbt, (ns)
650
Eoff, Typ, Tj=125°c, Igbt, (mj)
9.6
Rthjc, Max, Igbt, (k/w)
0.63
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXSH25N120A
Manufacturer:
IXYS
Quantity:
15 500
Company:
Part Number:
IXSH25N120AU1
Manufacturer:
NEC
Quantity:
10 000
© 2000 IXYS All rights reserved
IGBT
Improved SCSOA Capability
Symbol
BV
V
I
I
V
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)Clamped inductive load, L = 100 µH
t
P
T
T
T
M
Weight
Max. Lead Temperature for
Soldering (1.6mm from case for 10s)
CES
GES
CM
C25
C90
sc
J
JM
STG
GE(th)
CE(sat)
CES
CGR
GES
GEM
C
d
CES
T
T
Continuous
Transient
T
T
T
V
T
T
Mounting torque
C
C
C
C
J
J
J
GE
= 125ºC, V
= 15 V, T
Test Conditions
I
I
V
Note 2
V
I
Test Conditions
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 25°C
C
C
C
CE
CE
= I
= 3 mA, V
= 2.5 mA, V
= 0.8 V
= 0 V, V
C90
, V
J
CE
GE
= 125°C, R
= 720 V; V
CES
= 15 V
GE
GE
, V
= ±20 V
CE
= 0 V
GE
= V
GE
= 0 V
G
= 1 MW
GE
GE
= 33 W
= 15V, R
T
T
J
J
(T
= 25°C
= 125°C
J
G
= 25°C unless otherwise specified)
= 33W
IXSH25N120A
Min.
1200
-55 ... +150
-55 ... +150
@ 0.8 V
Characteristic Values
I
CM
4
1.15/10
Maximum Ratings
300
1200
1200
= 50
6
Typ.
±20
±30
200
150
CES
50
25
80
10
+ 100
Max.
200
4.0
Nm/lb-in.
8
1 mA
mA
nA
°C
°C
°C
°C
µs
W
V
V
V
V
V
V
V
A
A
A
A
g
I
V
V
TO-247AD
Features
• Second generation HDMOS
• MOS Gate turn-on
Applications
• AC motor speed control
• DC servo and robot drives
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
• DC choppers
Advantages
• Easy to mount (isolated mounting
• Reduces assembly time and cost
C25
Low V
- for minimum on-state conduction
- drive simplicity
power supplies
hole)
CES
CE(sat)
losses
CE(sat)
G
C
E
=
= 1200 V
=
4.0 V
50 A
95593A (7/00)
TM
process
1 - 2
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IXSH25N120A Summary of contents
Page 1
... CES CE CES GE Note ±20 V GES CE(sat) C C90 GE IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IXSH25N120A Maximum Ratings 1200 1200 ±20 ± 0.8 V CES = 15V 33W 200 -55 ... +150 150 -55 ... +150 1.15/10 6 300 ...
Page 2
... CES 650 9.6 100 200 1.8 450 900 17 0.25 (Clamp) > 0 higher values. CES J IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 4,850,072 4,931,844 5,034,796 IXSH 25N120A TO-247 AD (IXSH) Outline Max Dim ...