IXST35N120B IXYS, IXST35N120B Datasheet - Page 2

• Manufacturer Part Number: IXST35N120B
• Description: IGBT 1200V 70A SCSOA TO-268
• Manufacturer: IXYS

Specifications of IXST35N120B

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 35A
• Current - Collector (ic) (max): 70A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 70
• Ic90, Tc=90°c, Igbt, (a): 35
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.6
• Tfi, Typ, Igbt, (ns): 180
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5
• Rthjc, Max, Igbt, (k/w): 0.42
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
d(on)
d(off)
d(on)
d(off)
ri
fi
ri
fi
fs
off
on
off
thJC
thCK
ies
oes
res
g
ge
gc
Test Conditions
Inductive load, T
Inductive load, T
C
C
C
C
CE
G
CE
G
C90
C90
C90
C90
G
CES
GE
GE
GE
CE
CE
GE
J
J
= 25 C
= 125 C
CES
CE
J
CES
CE
min.
4,835,592
4,850,072
Characteristic Values
typ.
CES
4,881,106
4,931,844
max.
5,017,508
5,034,796
J
TO-247 AD Outline (IXSH)
5,049,961
TO-268 Outline (IXST)
5,063,307
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
Dim.
A
A
A
b
b
C
D
E
E
e
H
L
L1
L2
L3
L4
2
1
2
1
IXSH 35N120B
IXST 35N120B
13.80
15.85
18.70
5,187,117
5,237,481
1.15
13.3
2.40
1.20
1.00
3.80
Min.
4.9
2.7
.02
1.9
Millimeter
5.45 BSC
0.25 BSC
.4
14.00
16.05
19.10
Max.
1.45
13.6
2.70
1.40
1.15
4.10
5.1
2.9
.25
2.1
.65
5,486,715
5,381,025
.193
.106
.001
.045
.016
.543
.624
.524
.736
.094
.047
.039
.150
Min.
.75
Inches
.215 BSC
.010 BSC
6,306,728B1
Max.
.201
.114
.010
.057
.026
.551
.632
.535
.752
.106
.055
.045
.161
.83