IXGH90N60B3 IXYS, IXGH90N60B3 Datasheet

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IXGH90N60B3

Manufacturer Part Number
IXGH90N60B3
Description
IGBT 600V 75A TO-247
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH90N60B3

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.8V @ 15V, 90A
Current - Collector (ic) (max)
75A
Power - Max
660W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
600
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
90
Vce(sat), Max, Tj=25°c, Igbt, (v)
1.8
Tfi, Typ, Tj=25°c, Igbt, (ns)
148
Eoff, Typ, Tj=125°c, Igbt, (mj)
2.80
Rthjc, Max, Igbt, (°c/w)
0.19
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
GenX3
Medium speed low Vsat PT
IGBTs 5-40 kHz switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
M
T
T
Weight
Symbol
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, unless otherwise specified)
TM
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load @ V
T
Mounting torque
Maximum lead temperature for soldering
1.6mm (0.062 in.) from case for 10s
Test Conditions
Test Conditions
V
I
I
V
V
I
C
C
C
J
J
C
C
C
C
GE
CE
GE
CE
= 250μA, V
= 250μA, V
= 90A, V
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C (Limited by leads)
= 110°C (Chip capability)
= 25°C, 1ms
= 15V, T
= 25°C
600V IGBT
= V
= 0V, V
= 0V
CES
GE
GE
VJ
= ±20V
= 125°C, R
GE
CE
= 15V, Note 1
= 0V
= V
GE
GE
= 1MΩ
G
Preliminary Technical Information
= 2Ω
CE
≤ 600V
T
T
J
J
= 125°C
= 125°C
IXGH90N60B3
Min.
600
Characteristic Values
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
I
1.13 / 10
CM
Typ.
1.62
= 180
1.55
600
600
±20
±30
500
660
150
300
260
75
90
6
Max.
±100
1.80
750
5.0
Nm/lb.in.
75
μA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
V
g
V
I
V
t
TO-247 AD (IXGH)
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for low conduction and
switching losses
Square RBSOA
International standard package
High power density
Low gate drive requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
C
TAB = Collector
≤ ≤ ≤ ≤ ≤
= 600V
= 90A
= 148ns
£
= Collector
1.8V
C (TAB)
DS99994(05/08)

Related parts for IXGH90N60B3

IXGH90N60B3 Summary of contents

Page 1

... CES CE CES ±20V 0V, V GES 90A 15V, Note 1 CE(sat © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGH90N60B3 Maximum Ratings 600 = 1MΩ 600 GE ±20 ± 500 = 2Ω 180 G CM ≤ 600V CE 660 -55 ... +150 150 -55 ... +150 1. 300 260 6 Characteristic Values Min ...

Page 2

... CES 1.32 150 148 1. 1.93 220 253 2.80 0.21 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH90N60B3 TO-247 AD Outline Max Dim. Millimeter ns Min. Max 2 1.0 250 ns b 1.65 2 ...

Page 3

... V = 15V GE 13V 11V 1.4 1.6 1.8 2.0 2.2 2.4 160 T = 25ºC 140 J 120 100 IXGH90N60B3 Fig. 2. Extended Output Characteristics @ 25º 15V GE 11V Volts CE Fig. 4. Dependence of V Junction Temperature 1 15V GE 1 180A C 1.3 1.2 1.1 ...

Page 4

... 25ºC 10 125ºC 100 120 140 160 200 180 C ies 160 140 120 100 C oes C res Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH90N60B3 Fig. 8. Gate Charge V = 300V 90A 100 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area 125º ...

Page 5

... I = 60A C 1.0 0 105 115 125 300 d(off) 280 = 2Ω 15V G GE 260 = 480V CE 240 220 200 180 160 140 120 IXGH90N60B3 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 480V 125º 25º Amperes C Fig. 15. Inductive Turn-off Switching Times vs. Gate Resistance ...

Page 6

... Degrees Centigrade J IXYS reserves the right to change limits, test conditions, and dimensions. 90 100 90A 60A 90A 60A 105 115 125 IXGH90N60B3 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on 2Ω 15V 480V 25º 125º Amperes IXYS REF: G_90N60B3(85) 4-24-08 ...

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