IXGH60N60 IXYS, IXGH60N60 Datasheet - Page 4

• Manufacturer Part Number: IXGH60N60
• Description: TRANSISTOR IGBT N-CHAN 600V 75A
• Manufacturer: IXYS

Specifications of IXGH60N60

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.7V @ 15V, 60A
• Current - Collector (ic) (max): 75A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 75A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 600
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): 60
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 1.7
• Tfi, Typ, Tj=25°c, Igbt, (ns): 360
• Eoff, Typ, Tj=125°c, Igbt, (mj): 17
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: Q2124563A

© 2000 IXYS All rights reserved
1000
750
500
250
0.001
0.01
0
0.1
0.00001
15
12
9
6
3
0
1
0
0
V
Fig. 7. Dependence of tfi and E
R
T
Fig. 9. Gate Charge
I
CE
20
C
J
G
Fig. 11. Transient Thermal Resistance
= 125°C
= 60A
= 10
= 300V
50
W
Q
40
G
I
C
- nanocoulombs
100
- Amperes
tfi
60
0.0001
E
150
off
80
200
100
OFF
120
250
0.001
on I
40
30
20
10
0
Pulse Width - Seconds
C
.
10000
1000
1000
100
800
600
400
200
10
0.01
0
0
IXGH 60N60 IXGK 60N60
T
Fig. 8. Dependence of tfi and E
Fig. 10. Junction Capacitance Curves
J
I
C
= 125°C
= 60A
10
10
V
R
20
CE
G
0.1
- Ohms
- Volts
20
30
IXGT 60N60
E
off
tfi
30
40
Cies
OFF
40
50
1
on R
4 - 4
18
16
14
12
10
G
.