IXGR35N120C IXYS, IXGR35N120C Datasheet
IXGR35N120C
Manufacturer Part Number
IXGR35N120C
Description
IGBT 70A 1200V ISOPLUS247
Manufacturer
IXYS
Series
HiPerFAST™r
Datasheet
1.IXGR35N120B.pdf
(2 pages)
Specifications of IXGR35N120C
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
4V @ 15V, 35A
Current - Collector (ic) (max)
70A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
70
Ic90, Tc=90°c, Igbt, (a)
35
Ic110, Tc=110°c, Igbt, (a)
-
Vce(sat), Max, Tj=25°c, Igbt, (v)
4
Tfi, Typ, Tj=25°c, Igbt, (ns)
115
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.2
Rthjc, Max, Igbt, (°c/w)
0.5
If, Tj=110°c, Diode, (a)
-
Rthjc, Max, Diode, (ºc/w)
-
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
HiPerFAST
ISOPLUS247
(Electrically Isolated Backside)
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
Symbol
BV
V
I
I
V
CM
© 2001 IXYS All rights reserved
C25
C90
CES
GES
JM
J
stg
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
CES
I
I
V
V
V
I
C
C
C
GE
CE
CE
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
Test Conditions
C
C
C
C
J
J
GE
= 1 mA, V
= 750 A, V
=
= 0 V; note 1
= 0 V, V
= I
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 90 C
= 25 C, 1 ms
= 15 V, T
= 25 C
C90
CES
, V
GE
GE
TM
GE
= 15 V
= 20 V
VJ
CE
= 0 V
= 125 C, R
= V
TM
IGBT
GE
T
T
T
GE
J
J
J
= 125 C
= 125 C
= 125 C
= 1 M
G
= 10
(T
J
= 25 C, unless otherwise specified)
35N120C
35N120B
IXGR 35N120B
IXGR 35N120C
1200
2.5
Min.
Characteristic Values
-55 ... +150
-55 ... +150
@ 0.8 V
Maximum Ratings
Typ.
2.7
3.4
I
CM
1200
1200
= 90
150
300
140
200
20
30
CES
70
35
Max.
250
3.3
4.0
5
100
5.0
5
1200 V 70 A 3.3 V 160 ns
1200 V 70 A 4.0 V 115 ns
mA
nA
W
V
C
C
C
C
A
V
V
V
V
A
A
A
A
g
V
V
V
V
V
V
CES
ISOPLUS 247
G = Gate,
E = Emitter
Features
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
MOS Gate turn-on
- drive simplicity
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
High power density
I
E153432
C25
G
C
E
V
C = Collector
CE(sat)
Isolated Backside*
98818 (04/01)
t
fi(typ)
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IXGR35N120C Summary of contents
Page 1
... GE(th CES CE CES note GES CE(sat) C C90 © 2001 IXYS All rights reserved IXGR 35N120B IXGR 35N120C Maximum Ratings 1200 = 1 M 1200 140 = 0.8 V CES 200 -55 ... +150 150 -55 ... +150 300 5 Characteristic Values ( unless otherwise specified) J Min. Typ. Max. 1200 2.5 ...
Page 2
... E off R thJC R thCK 1. Pulse test, 300 ms, duty cycle:d p IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values J min. typ. max. CES 35N120B 35N120C 35N120B CES ...