IXGH40N120B2D1 IXYS, IXGH40N120B2D1 Datasheet

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IXGH40N120B2D1

Manufacturer Part Number
IXGH40N120B2D1
Description
IGBT HI SPEED 1200V 75A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXGH40N120B2D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
380W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
75
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
40
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
140
Eoff, Typ, Tj=125°c, Igbt, (mj)
8.3
Rthjc, Max, Igbt, (°c/w)
0.33
If, Tj=110°c, Diode, (a)
25
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Other names
Q3206197
High Voltage IGBTs
w/Diode
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
V
I
I
V
© 2009 IXYS CORPORATION, All RrightsRreserved
C25
C110
F110
CM
CES
GES
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
= 25°C Unless Otherwise Specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
V
Clamped Inductive Load
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
I
V
V
I
C
C
C
J
C
C
C
C
C
GE
CE
CE
= 25°C to 150°C, R
= 250μA, V
= 40A, V
= 25°C to 150°C
= 25°C (Limited by Lead)
= 110°C
= 110°C
= 25°C
= 25°C, 1ms
= 15V, T
= 0V, V
= V
CES,
GE
GE
V
VJ
GE
CE
= 15V, Note 1
= ± 20V
= 125°C, R
= 0V
= V
GE
GE
= 1M
G
= 2
Ω
Ω
IXGH40N120B2D1
IXGT40N120B2D1
T
J
= 125°C
@ 0.8
-55 ... +150
-55 ... +150
Characteristic Values
3.0
Min.
I
CM
Maximum Ratings
1.13/10
=
1200
1200
± 20
± 30
V
200
380
150
300
260
CES
75
40
25
80
Typ.
6
4
2.9
±100
Max.
100
3.5
Nm/lb.in.
5.0
3
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
A
A
A
A
A
V
g
g
TO-247 (IXGH)
TO-268 (IXGT)
G = Gate
E = Emitter
V
I
V
t
Features
Advantages
C110
fi(typ)
International Standard Packages
IGBT and Anti-Parallel FRED for
Resonant Power Supplies
- Induction Heating
- Rice Cookers
Square RBSOA
Fast Recovery Expitaxial Diode
High Power Density
Low Gate Drive Requirement
(FRED)
- Soft Recovery with Low I
CES
CE(sat)
G
C
G
≤ ≤ ≤ ≤ ≤ 3.5V
= 1200V
= 40A
= 140ns
E
E
C
TAB = Collector
= Collector
C (TAB)
DS99555B(02/09)
C (TAB)
RM

Related parts for IXGH40N120B2D1

IXGH40N120B2D1 Summary of contents

Page 1

... 250μ GE(th CES CE CES 0V ± 20V GES 40A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All RrightsRreserved IXGH40N120B2D1 IXGT40N120B2D1 Maximum Ratings 1200 Ω 1200 ± 20 ± 200 Ω ≤ @ 0.8 V CES 380 -55 ... +150 150 -55 ... +150 300 260 1.13/ Characteristic Values Min ...

Page 2

... Characteristic Values Min. Typ 150°C 1 100° 100°C 100 J (Clamp) > 0.8 • CES 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH40N120B2D1 IXGT40N120B2D1 TO-247 (IXGH) Outline Max Terminals Gate 3 - Source ns Dim. Millimeter Min 4 2 2.2 270 ns ...

Page 3

... GE 13V 1.5 11V 1.4 1.3 9V 1.2 1.1 7V 1.0 0.9 0.8 5V 0.7 0.6 2.5 3.0 3.5 4.0 4.5 120 T = 25ºC J 100 IXGH40N120B2D1 IXGT40N120B2D1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 40A 20A ...

Page 4

... IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions 40ºC 25ºC 125º 100 110 120 ies oes res Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH40N120B2D1 IXGT40N120B2D1 Fig. 8. Gate Charge 600V 40A NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º ...

Page 5

... I = 20A, 80A C 160 240 120 210 85 95 105 115 125 IXGH40N120B2D1 IXGT40N120B2D1 Fig. 13. Inductive Switching Energy Loss vs. Junction Temperature off 2Ω 15V 960V 20A ...

Page 6

... I - Amperes C IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions. 120 30 29 110 I = 80A 28 C 100 40A 20A IXGH40N120B2D1 IXGT40N120B2D1 Fig. 19. Inductive Turn-on Switching Times vs. Junction Temperature d(on 2Ω 15V 960V Degrees Centigrade 80A 40A 20A 105 115 125 IXYS REF: G_40N120B2(6ZC) 3-30-06 ...

Page 7

... Fig. 22. Reverse recovery charge Q F versus -di / 60A 30A 15A 160 0 200 400 600 -di /dt F Fig. 25. Recovery time t rr 0.01 0.1 IXGH40N120B2D1 IXGT40N120B2D1 100° 300V 60A 30A 15A A/μs 1000 0 200 400 /dt F Fig. 23. Peak reverse current I r versus - 100° ...

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