IXER60N120 IXYS, IXER60N120 Datasheet
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Manufacturer Part Number
IXER60N120
Description
IGBT NPT3 1200V 95A ISOPLUS247
Specifications of IXER60N120
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.7V @ 15V, 60A
Current - Collector (ic) (max)
95A
Power - Max
375W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
95A
Gate To Emitter Voltage (max)
±20V
Package Type
ISOPLUS 247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (min)
-55C
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
95
Ic90, Tc=90°c, Igbt, (a)
60
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.7
Tfi, Typ, Igbt, (ns)
30
Eoff, Typ, Tj=125°c, Igbt, (mj)
4.8
Rthjc, Max, Igbt, (°c/w)
0.33
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
-
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
NPT
in ISOPLUS 247
Symbol
V
V
I
I
I
V
t
(SCSOA)
P
Symbol
V
V
I
I
t
t
t
t
E
E
C
Q
R
R
© 2006 IXYS All rights reserved
IGBT
C25
C90
CM
CES
GES
d(off)
SC
d(on)
r
f
GES
CEK
tot
CE(sat)
GE(th)
on
off
CES
ies
Gon
thJC
thJH
3
IGBT
Conditions
T
T
T
V
RBSOA, Clamped inductive load; L = 100 µH
V
non-repetitive
T
Conditions
I
I
V
V
V
V
C
C
VJ
C
C
C
GE
CE
CE
CE
CE
CE
= 60 A; V
= 2 mA; V
= 25°C
= 90°C
= 25°C
Inductive load, T
V
V
= 25°C to 150°C
= 600 V; V
= 900 V; V
= V
= 25 V; V
= ± 15 V; R
= 0 V; V
CE
GE
CES
= 600 V; I
= ± 15 V; R
; V
GE
GE
GE
GE
TM
GE
= 15 V; T
GE
GE
= V
= ± 20 V
G
= 0 V; T
= 0 V; f = 1 MHz
= 22 Ω; T
= 15 V; I
= ± 15 V; R
C
CE
G
= 60 A
= 22 Ω
VJ
T
T
= 125°C
VJ
VJ
VJ
VJ
= 25°C
= 125°C
C
= 25°C
= 125°C
VJ
= 50 A
G
= 125°C
= 22 Ω; T
(T
VJ
= 25°C, unless otherwise specified)
VJ
= 125°C
min.
4.5
Characteristic Values
Maximum Ratings
0.66
680
350
typ.
2.1
2.5
0.1
7.2
4.8
3.8
80
50
30
1200
± 20
V
375
100
95
60
CES
10
G
0.33 K/W
max.
200
0.1 mA
2.7
6.5
K/W
E
mA
µs
C
mJ
mJ
nC
W
nA
nF
ns
ns
ns
ns
V
V
A
A
A
V
V
V
I
V
V
ISOPLUS 247
G = Gate
Features
• NPT
• ISOPLUS 247
Applications
• single switches
and with complementary free wheeling
diodes
• choppers
• phaselegs, H bridges, three phase
C25
- low saturation voltage
- positive temperature coefficient for
- fast switching
- short tail current for optimized
- isolated back surface
- low coupling capacity between pins
- high reliability
- industry standard outline
bridges e.g. for
- power supplies, UPS
- AC, DC and SR drives
- induction heating
CES
CE(sat) typ.
performance in resonant circuits
and heatsink
easy paralleling
3
IGBT
E153432
C = Collector
IXER 60N120
G
TM
C
=
= 1200 V
=
TM
E
package
2.1 V
Isolated Backside
95 A
E = Emitter
1 - 4
Related parts for IXER60N120
IXER60N120 Summary of contents
... off MHz ies 600 Gon thJC R thJH © 2006 IXYS All rights reserved G Maximum Ratings 1200 ± 125°C 100 VJ V CES = 22 Ω 125° 375 Characteristic Values (T = 25°C, unless otherwise specified) VJ min. typ. = 25°C 2 125°C 2 ...
... ISOL ISOL F mounting force with clip C Symbol Conditions C coupling capacity between shorted p pins and mounting tab in the case Weight © 2006 IXYS All rights reserved Equivalent Circuits for Simulation Maximum Ratings Conduction °C -55...+150 °C -55...+125 2500 V~ 20...120 N IGBT (typ Characteristic Values min ...
... 100 Fig. 1 Typ. output characteristics 160 120 125° 25° Fig. 3 Typ. transfer characteristics © 2006 IXYS All rights reserved 25° IXER 60N120 120 100 Fig. 2 Typ. output characteristics 100 200 300 Fig. 4 Typ. turn on gate charge 125° 600 V ...
... Fig. 8 Typ. turn off energy and switching times versus gate resistor 1 K/W 0.1 single pulse 0.0001 0.001 0.01 0.1 t Fig. 10 Typ. transient thermal impedance 800 ns t d(off) 600 t 400 200 100 A 1200 ns t d(off) 1000 t 800 600 400 200 Ω 100 120 IXER60N120 ...
Related keywords
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