IXGT24N170AH1 IXYS, IXGT24N170AH1 Datasheet

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IXGT24N170AH1

Manufacturer Part Number
IXGT24N170AH1
Description
IGBT 24A 1700V TO-268
Manufacturer
IXYS
Datasheet

Specifications of IXGT24N170AH1

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
6V @ 15V, 16A
Current - Collector (ic) (max)
24A
Power - Max
250W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
1700
Ic25, Tc=25°c, Igbt, (a)
24
Ic90, Tc=90°c, Igbt, (a)
16
Vce(sat), Max, Tj=25°c, Igbt, (v)
6
Tfi, Typ, Igbt, (ns)
40
Eoff, Typ, Tj=125°c, Igbt, (mj)
1.47
Rthjc, Max, Igbt, (°c/w)
0.5
If, Tc=90°c, Diode, (a)
-
Rthjc, Max, Diode, (k/w)
0.9
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Voltage
IGBTs w/Diode
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
P
T
T
T
T
T
M
Weight
Symbol Test Conditions
(T
BV
V
I
I
V
© 2009 IXYS CORPORATION, All Rights Reserved
C25
C90
CM
CES
GES
SC
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C Unless Otherwise Specified)
Test Conditions
I
I
V
V
I
T
T
Continuous
Transient
T
T
T
V
Clamped Inductive Load
T
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-247
TO-268
C
C
C
C
J
C
C
C
J
C
CE
CE
GE
= 250μA, V
= 250μA, V
= 16A, V
= 25°C to 150°C, R
= 125°C, V
= 25°C to 150°C
= 25°C
= 25°C
= 25°C, 1ms
= 0V, V
= 90°C
= 0.8 • V
= 15V, T
GE
GE
CES
VJ
GE
CE
= 15V, Note 1
= ± 20V
CE
= 125°C, R
, V
= V
= 0V
= 1200V, V
GE
GE
= 0V
GE
= 1MΩ
G
GE
= 10Ω
Preliminary Technical Information
= 15V, R
T
T
J
J
= 125°C
= 125°C
IXGH24N170AH1
IXGT24N170AH1
G
= 22Ω
1700
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
0.8 • V
I
Maximum Ratings
CM
1.13/10
1700
= 50
1700
± 20
± 30
250
150
300
260
Typ.
CES
24
4.5
4.8
75
10
16
6
4
±100
Max.
Nm/lb.in.
100
5.0
6.0
1.5 mA
nA
μA
μs
°C
°C
°C
°C
°C
W
V
V
V
V
V
V
V
V
A
A
A
A
V
g
g
TO-268 (IXGT)
G = Gate
E = Emitter
V
I
V
t
TO-247 (IXGH)
Features
Advantages
Applications
C25
fi(typ)
Optimized for Low Conduction and
Switching Losses
Anti-Parallel Ultra Fast Diode
International Standard Packages
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Welding Machines
CES
CE(sat)
G
C
E
G
≤ ≤ ≤ ≤ ≤ 6.0V
= 1700V
= 24A
= 40ns
E
C
TAB = Collector
DS99413A(05/09)
= Collector
C (TAB)
C (TAB)

Related parts for IXGT24N170AH1

IXGT24N170AH1 Summary of contents

Page 1

... 0.8 • CES CE CES 0V ± 20V GES 16A 15V, Note 1 CE(sat © 2009 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXGH24N170AH1 IXGT24N170AH1 Maximum Ratings 1700 = 1MΩ 1700 ± 20 ± 10Ω 0.8 • V CES = 15V 22Ω 250 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... Characteristic Values Min. Typ. 2 125°C 2 125° 200 (Clamp) > 0.5 • CES . G 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGH24N170AH1 IXGT24N170AH1 TO-247 (IXGH) Outline Max Terminals Gate Source mJ Dim. Millimeter Min. Max 4 2 2 ...

Page 3

... GE 13V 1.6 11V 9V 1.4 7V 1.2 1.0 0.8 0.6 5V 0.4 5.0 6.0 7.0 8.0 9 25º IXGH24N170AH1 IXGT24N170AH1 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 48A 24A 12A C -50 - Degrees Centigrade J Fig. 6. Input Admittance T = 125º ...

Page 4

... C ies oes res 0 200 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGH24N170AH1 IXGT24N170AH1 Fig. 8. Gate Charge V = 850V 24A 10mA 100 Q - NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 125º 10Ω < 10V / ns 400 600 800 1000 1200 V - Volts CE 0 ...

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