IXBH42N170A IXYS, IXBH42N170A Datasheet - Page 2

IC TRANS BIPO 75A 1700V TO-247

IXBH42N170A

Manufacturer Part Number
IXBH42N170A
Description
IC TRANS BIPO 75A 1700V TO-247
Manufacturer
IXYS
Series
BIMOSFET™r
Datasheet

Specifications of IXBH42N170A

Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
6V @ 15V, 21A
Current - Collector (ic) (max)
42A
Power - Max
350W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Collector- Emitter Voltage Vceo Max
1700 V
Collector-emitter Saturation Voltage
6 V
Maximum Gate Emitter Voltage
20 V
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
42 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
Vces, (v)
1700
Ic25, Tc=25°c, (a)
42
Ic90, Tc=90°c, (a)
21
Vce(sat), Typ, Tj=25°c, (v)
6
Tf Typ, Tj=25°c, (ns)
50
Gate Drive, (v)
15
Rthjc, Max, (k/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXBH42N170A
Manufacturer:
IXYS
Quantity:
18 000
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode
Symbol
V
I
t
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
RM
d(on)
d(off)
fi
d(on)
d(off)
fi
ri
ri
rr
fs
off
on
off
F
ies
oes
res
thJC
thCK
g
ge
gc
Test Conditions
I
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
V
I
Remarks: Switching times may
increase for V
higher T
(TO-247)
Test Conditions
I
t
I
v
Inductive load, T
I
V
Remarks: Switching times may
increase for V
higher T
Inductive load, T
I
V
C
C
F
F
C
C
R
CE
CE
CE
= I
= 0.8 V
= I
= 0.8 V
= I
< 300 us, duty cycle d < 2%
= 25A, V
= 100V
= I
= 25 V, V
= I
C90
C90
C90
C90
C90
J
J
, V
, V
, V
; V
, V
or increased R
or increased R
CES
CES
GE
GE
CE
GE
GE
GE
GE
CE
= 15 V
, R
CE
= 15 V
, R
= 10 V,
= 15 V, V
= 0 V, Pulse test,
= 0 V, -di
= 0 V, f = 1 MHz
(Clamp) > 0.8 • V
(Clamp) > 0.8 • V
G
G
J
J
= R
= R
= 25° ° ° ° ° C
= 125° ° ° ° ° C
off
off
CE
F
= 1.0 Ω
= 1.0 Ω
G
/dt = 50 A/us
G
= 0.5 V
(T
(T
J
J
Min Recommended Footprint
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
CES
CES
CES
,
,
min.
min.
Characteristic Values
15
Characteristic Values
4,835,592
4,850,072
3700
0.25
typ.
typ.
330
170
155
230
300
120
2.8
5.0
15
24
45
30
55
25
35
50
25
38
6
4,881,106
4,931,844
max.
max.
0.35 K/W
5.0
K/W
5,017,508
5,034,796
mJ
mJ
mJ
nC
nC
nC
pF
pF
pF
n s
n s
n s
n s
n s
n s
n s
n s
n s
S
V
A
5,049,961
5,063,307
TO-268 Outline
TO-247 AD Outline
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXBH 42N170A
IXBT 42N170A
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
5,187,117
5,237,481
.4
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
e
5,486,715
5,381,025
0.205 0.225
0.232 0.252
∅ P
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
6,306,728B1

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