IXBT42N170A IXYS, IXBT42N170A Datasheet
IXBT42N170A
Manufacturer Part Number
IXBT42N170A
Description
IC TRANS BIPO 42A 1700V TO-268
Manufacturer
IXYS
Series
BIMOSFET™r
Datasheet
1.IXBH42N170A.pdf
(2 pages)
Specifications of IXBT42N170A
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
6V @ 15V, 21A
Current - Collector (ic) (max)
42A
Power - Max
350W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
TO-268
Vces, (v)
1700
Ic25, Tc=25°c, (a)
42
Ic90, Tc=90°c, (a)
21
Vce(sat), Typ, Tj=25°c, (v)
6
Tfi Typ, Tj=25°c, (ns)
50
Gate Drive, (v)
15
Rthjc, Max, (k/w)
0.35
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXBT42N170A
Manufacturer:
IXYS
Quantity:
18 000
BIMOSFET
Bipolar MOS Transistor
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
T
(SCSOA)
P
T
T
T
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
M
Weight
Symbol
BV
V
I
I
V
© 2002 IXYS All rights reserved
CM
C25
C90
GES
CES
JM
SC
J
stg
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
CES
Test Conditions
T
T
Continuous
Transient
T
T
T
V
Clamped inductive load
V
R
T
Mounting torque (M3)
TO-247 AD
TO-268
Test Conditions
I
I
V
V
V
I
C
C
C
C
C
C
C
J
J
CE
GE
CE
GE
GE
G
= 10 Ω non repetitive
= 25°C to 150°C
= 25°C to 150°C; R
= 25°C
= 90°C
= 25°C, 1 ms
= 25°C
= 15 V, T
= 15 V, V
TM
= 250 µA, V
= 750 µA, V
= 0.8 V
= 0 V
= 0 V, V
= I
C90
Monolithic
, V
CES
GE
GE
VJ
CES
= 15 V
= ±20 V
= 125°C, R
GE
CE
= 1200V, T
= 0 V
= V
GE
GE
= 1 MΩ
G
= 10 Ω
T
T
T
J
(T
Advance Technical Information
= 125°C
J
J
J
J
= 25°C
= 125°C
= 125°C
= 25°C, unless otherwise specified)
IXBH 42N170A
IXBT 42N170A
1700
min.
I
V
2.5
CM
Characteristic Values
CES
-55 ... +150
-55 ... +150
Maximum Ratings
=
=
typ.
4.5
5.0
1.13/10Nm/lb.in.
1700
1700
1350
260
120
350
150
350
±20
±30
42
21
90
10
max.
±100
6
4
5.5
1.5 mA
6.0
50
µs
°C
°C
°C
°C
°C
µA
nA
V
V
V
V
A
A
A
A
V
W
g
g
V
V
V
V
Features
Applications
Advantages
TO-268 (IXBT)
TO-247 AD (IXBH)
G = Gate,
E = Emitter,
V
I
V
t
C25
fi
High Blocking Voltage
JEDEC TO-268 surface and
JEDEC TO-247 AD
Fast switching
High current handling capability
MOS Gate turn-on
- drive simplicity
Molding epoxies meet UL 94 V-0
flammability classification
AC motor speed control
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Substitutes for high voltage MOSFETs
Lower conduction losses than MOSFETs
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
CES
CE(sat)
G
G
= 1700 V
=
=
=
C
E
C = Collector,
TAB = Collector
E
6.0 V
42 A
50 ns
98939 (7/02)
C (TAB)
(TAB)
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IXBT42N170A Summary of contents
Page 1
... GE(th 0.8 V CES CE CES ± GES CE(sat) C C90 GE © 2002 IXYS All rights reserved Advance Technical Information IXBH 42N170A IXBT 42N170A Maximum Ratings 1700 = 1 MΩ 1700 GE ±20 ± 120 = 10 Ω 1350 CES = 125° 350 -55 ... +150 150 -55 ... +150 350 260 1 ...
Page 2
... 25A - 100V rr R IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max 3700 170 45 155 = 0 ...