FGH40N6S2D Fairchild Semiconductor, FGH40N6S2D Datasheet - Page 5

• Manufacturer Part Number: FGH40N6S2D
• Description: IGBT N-CH SMPS 600V 75A TO247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH40N6S2D

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 20A
• Current - Collector (ic) (max): 75A
• Power - Max: 290W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: FGH40N6S2D_NL; FGH40N6S2D_NL

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 17. Capacitance vs Collector to Emitter
200
175
150
125
100
2.4
2.0
1.6
1.2
0.8
0.4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
75
50
25
Figure 15. Total Switching Loss vs Case
0
0
25
3
0
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
Figure 13. Transfer Characteristic
T
E
FREQUENCY = 1MHz
J
TOTAL
TJ = 125
= 125
C
C
C
4
IES
OES
RES
V
= E
CE
o
20
C, L = 200 H, V
50
V
, COLLECTOR TO EMITTER VOLTAGE (V)
ON2
5
GE
o
I
C
CE
T
, GATE TO EMITTER VOLTAGE (V)
TJ = 25
C
+ E
= 40A
Temperature
, CASE TEMPERATURE (
6
OFF
Voltage
o
75
40
CE
C
I
CE
CE
7
= 10V
= 390V, V
= 20A
8
100
60
TJ = -55
GE
9
= 15V
o
o
C)
C
10
125
T
80
J
I
CE
= 25°C unless otherwise noted
11
= 10A
150
100
12
Figure 18. Collector to Emitter On-State Voltage vs
4.0
3.6
3.2
2.8
2.4
2.0
1.6
100
16
14
12
10
0.1
10
Figure 16. Total Switching Loss vs Gate
8
6
4
2
0
1
1.0
6
0
DUTY CYCLE < 0.5%
PULSE DURATION = 250 s
I
G(REF)
T
E
J
TOTAL
V
= 125
CE
7
I
I
I
I
CE
CE
CE
CE
= 1mA, R
= 600V
5
Figure 14. Gate Charge
= E
Gate to Emitter Voltage
o
V
C, L = 200 H, V
= 40A
= 20A
= 10A
= 10A
8
V
CE
ON2
GE
I
CE
= 200V
, GATE TO EMITTER VOLTAGE (V)
Q
R
10
+ E
L
= 20A
9
G
G
Resistance
= 15
, GATE RESISTANCE ( )
10
, GATE CHARGE (nC)
OFF
I
V
CE
CE
= 40A
10
= 400V
15
CE
= 390V, V
11
20
12
GE
100
= 15V
13
25
14
FGH40N6S2D RevA3
30
15
1000
35
16