FGP20N6S2 Fairchild Semiconductor, FGP20N6S2 Datasheet - Page 5

• Manufacturer Part Number: FGP20N6S2
• Description: IGBT N-CH SMPS 600V 28A TO220AB
• Manufacturer: Fairchild Semiconductor

Specifications of FGP20N6S2

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 7A
• Current - Collector (ic) (max): 28A
• Power - Max: 125W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: FGP20N6S2_NL; FGP20N6S2_NL

©2003 Fairchild Semiconductor Corporation
Typical Performance Curves
Figure 17. Capacitance vs Collector to Emitter
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
100
0.8
0.6
0.4
0.2
80
60
40
20
Figure 15. Total Switching Loss vs Case
0
0
25
0
4
C
FREQUENCY = 1MHz
T
Figure 13. Transfer Characteristic
RES
DUTY CYCLE < 0.5%, V
PULSE DURATION = 250 s
R
E
J
G
TOTAL
= 125
10
= 25 , L = 500 H, V
C
C
V
OES
IES
6
= E
CE
o
C
50
20
V
, COLLECTOR TO EMITTER VOLTAGE (V)
ON2
GE
T
, GATE TO EMITTER VOLTAGE (V)
T
C
+ E
30
J
Temperature
, CASE TEMPERATURE (
= -55
8
OFF
Voltage
75
40
o
C
CE
CE
= 390V, V
= 10V
50
10
100
60
GE
12
= 15V
70
o
C)
(Continued)
125
80
14
I
I
I
CE
CE
CE
T
J
= 14A
= 7A
= 3A
90
= 25
o
C
150
100
16
Figure 18. Collector to Emitter On-State Voltage vs
0.05
16
14
12
10
0.1
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
10
8
6
4
2
0
Figure 16. Total Switching Loss vs Gate
1
5
1
0
T
E
I
G(REF)
J
TOTAL
I
= 125
I
I
CE
CE
CE
6
= 14A
= 3A
= 7A
5
= E
= 1mA, R
Figure 14. Gate Charge
Gate to Emitter Voltage
o
V
7
C, L = 500 H, V
V
V
CE
ON2
CE
GE
= 200V
, GATE TO EMITTER VOLTAGE (V)
= 600V
8
+ E
10
R
I
CE
L
Q
G
Resistance
OFF
10
, GATE RESISTANCE ( )
= 42.6 , T
G
DUTY CYCLE < 0.5%
PULSE DURATION = 250 s, T
= 14A
, GATE CHARGE (nC)
9
FGH20N6S2D / FGP20N6S2D / FGB20N6S2D Rev. A2
I
CE
15
CE
10
= 7A
= 390V, V
J
= 25
V
11
CE
20
I
CE
o
= 400V
C
= 3A
GE
12
100
= 15V
25
13
14
J
30
= 25
15
o
C
1000
35
16