HGTG18N120BN Fairchild Semiconductor, HGTG18N120BN Datasheet - Page 7

• Manufacturer Part Number: HGTG18N120BN
• Description: IGBT NPT N-CH 1200V 54A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of HGTG18N120BN

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.7V @ 15V, 18A
• Current - Collector (ic) (max): 54A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1.2kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector Emitter Voltage Vces: 2.7V
• Power Dissipation Pd: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Continuous Collector Current Ic: 54A
• Collector Emitter Saturation Voltage Vce(sat): 2.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Handling Precautions for IGBTs
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
1. Prior to assembly into a circuit, all leads should be kept
2. When devices are removed by hand from their carriers,
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
5. Gate Voltage Rating - Never exceed the gate-voltage
6. Gate Termination - The gates of these devices are
7. Gate Protection - These devices do not have an internal
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
circuits with power on.
rating of V
permanent damage to the oxide layer in the gate region.
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
GEM
. Exceeding the rated V
GE
can result in
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows f
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
f
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. t
Device turn-off delay can establish an additional frequency
limiting condition for an application other than T
is important when controlling output ripple under a lightly
loaded condition.
f
allowable dissipation (P
The sum of device switching and conduction losses must
not exceed P
the conduction losses (P
P
E
shown in Figure 19. E
instantaneous power loss (I
E
(I
the calculation for E
zero (I
MAX1
MAX2
CE
C
ON2
OFF
= (V
x V
and E
is the integral of the instantaneous power loss
CE
is defined by f
is defined by f
CE
CE
= 0).
) during turn-off. All tail losses are included in
x I
OFF
D
d(OFF)I
CE
MAX1
. A 50% duty factor was used (Figure 3) and
)/2 .
are defined in the switching waveforms
MAX2
OFF
MAX1
or f
and t
ON2
D
) is defined by P
MAX2
; i.e., the collector current equals
C
= (P
d(ON)I
) are approximated by
= 0.05/(t
is the integral of the
CE
; whichever is smaller at each
D
CE
x V
- P
are defined in Figure 19.
) plots are possible using
C
CE
d(OFF)I
)/(E
) during turn-on and
D
OFF
= (T
+ t
HGTG18N120BN Rev. B
+ E
d(ON)I
JM
JM
ON2
- T
. t
C
).
). The
d(OFF)I
)/R
θJC
.