FGA15N120ANTDTU Fairchild Semiconductor, FGA15N120ANTDTU Datasheet - Page 6
FGA15N120ANTDTU
Manufacturer Part Number
FGA15N120ANTDTU
Description
IGBT NPT 1200V 15A TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGA15N120ANTDTU.pdf
(10 pages)
Specifications of FGA15N120ANTDTU
Igbt Type
NPT and Trench
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
186W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FGA15N120ANTDTU
Manufacturer:
APT
Quantity:
6 000
Part Number:
FGA15N120ANTDTU
Manufacturer:
ON/安森美
Quantity:
20 000
FGA15N120ANTD / FGA15N120ANTD_F109 Rev. B1
Typical Performance Characteristics
Figure 13. Gate Charge Characteristics
Figure 15. Turn-Off SOA
100
15
12
10
9
6
3
0
1
0
Common Emitter
R
T
L
C
= 40
= 25
Ω
o
C
20
Vcc = 200V
Collector-Emitter Voltage, V
10
1E-3
Gate Charge, Q
0.01
40
0.1
10
1
1E-5
Safe Operating Area
V
GE
= 15V, T
60
0.2
0.1
0.05
0.02
0.01
0.5
Figure 16. Transient Thermal Impedance of IGBT
100
g
C
[nC]
single pulse
= 125
80
400V
1E-4
CE
600V
o
C
[V]
100
1000
120
1E-3
Rectangular Pulse Duration [sec]
(Continued)
6
0.01
0 .0 1
10 0
0.1
1 0
1
0.1
Ic M A X (P u lse d)
Ic M A X (C o n tinu o us )
0.1
Figure 14. SOA Characteristics
S in g le N on re p etitive
P u lse T c = 25
C urves m u st b e de rate d
lin ea rly w ith incre ase
in te m pe ratu re
C o lle c to r - E m itte r V o lta g e , V
1
Pdm
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T
o
C
1
t1
D C O p e ra tio n
t2
1 0
C
10
10 0
1m s
C E
1 00
[V ]
μ
s
www.fairchildsemi.com
10 00
5 0
μ
s