FGPF30N30 Fairchild Semiconductor, FGPF30N30 Datasheet - Page 3

• Manufacturer Part Number: FGPF30N30
• Description: IGBT PDP 300V 80A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of FGPF30N30

• Voltage - Collector Emitter Breakdown (max): 300V
• Vce(on) (max) @ Vge, Ic: 1.5V @ 15V, 10A
• Power - Max: 46W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -
• Igbt Type: -

FGPF30N30 Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Saturation Voltage
Figure 5. Saturation Voltage vs. Case
2.0
1.5
1.0
0.5
80
70
60
50
40
30
20
10
80
60
40
20
0
0
0
25
0
Common Emitter
V
Temperature at Variant Current Level
GE
20V
15V
= 15V
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
2
Case Temperature, T
50
2
12V
4
75
6
C
Common Emitter
V
T
T
10V
30A
20A
10A
C
C
4
GE
[
o
= 25
= 125
C]
CE
= 15V
100
V
CE
GE
8
[V]
T
o
o
[V]
C
=
C
C
= 25
8V
o
C
10
125
6
Typical Saturation VoltageCharacteristics
Figure 4. Transfer Characteristics
Figure 2. Typical Output Characteristics
3
Figure 6. Saturation Voltage vs.V
20
16
12
80
70
60
50
40
30
20
10
80
60
40
20
0
8
4
0
0
0
0
0
Common Emitter
V
T
T
C
C
CE
= 25
= 125
= 20V
20V
15V
2
20A
Collector-Emitter Voltage, V
I
C
2
o
o
4
Gate-Emitter Voltage, V
C
C
= 10A
Gate-Emitter Voltage, V
4
6
4
8
12V
30A
8
6
12
10
V
GE
Common Emitter
T
C
GE
GE
10V
= 8V
GE
= 25
CE
12
[V]
T
[V]
8
[V]
C
o
16
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C
= 125
14
o
C
10
16
20