FGPF45N45TTU Fairchild Semiconductor, FGPF45N45TTU Datasheet - Page 3

• Manufacturer Part Number: FGPF45N45TTU
• Description: IGBT PDP 450V 45A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of FGPF45N45TTU

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce(on) (max) @ Vge, Ic: 1.5V @ 15V, 20A
• Power - Max: 51.6W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -

FGPF45N45T Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
180
150
120
180
150
120
1.8
1.6
1.4
1.2
1.0
90
60
30
90
60
30
0
0
25
0
0
T
Common Emitter
V
T
T
Common Emitter
V
C
Temperature at Variant Current Level
Collector-EmitterCase Temperature, T
C
C
GE
GE
Characteristics
= 25
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
Collector-Emitter Voltage, V
C
o
C
o
C
50
1
2
20V
75
2
12V
15V
4
I
C
= 20A
45A
30A
100
CE
CE
3
V
[V]
[V]
GE
10V
C
= 8V
[
o
C
]
125
6
4
3
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
180
150
120
180
150
120
90
60
30
90
60
30
20
16
12
0
0
8
4
0
0
0
0
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
o
2
Collector-Emitter Voltage, V
C
o
o
I
30A
C
4
C
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
= 20A
4
2
8
20V
45A
6
12
Common Emitter
T
12V
8
4
C
GE
GE
= 25
15V
CE
[V]
[V]
o
16
V
C
[V]
GE
10
GE
10V
= 8V
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