FGH30N120FTDTU Fairchild Semiconductor, FGH30N120FTDTU Datasheet - Page 4

• Manufacturer Part Number: FGH30N120FTDTU
• Description: IGBT TRENCH 1200V 30A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FGH30N120FTDTU

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 339W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 1200 V
• Maximum Gate Emitter Voltage: +/- 25 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FGH30N120FTD
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
3.0
2.5
2.0
1.5
1.0
120
100
180
150
120
80
60
40
20
90
60
30
0
0
25
Rev. A
0
0
Common Emitter
V
T
Characteristics
Common Emitter
V
T
T
Temperature at Variant Current Level
Collector-EmitterCase Temperature, T
GE
C
C
C
GE
= 25
= 25
= 125
= 15V
= 15V
Collector-Emitter Voltage, V
o
Collector-Emitter Voltage, V
o
C
C
o
C
50
2
17V
2
20V
75
4
15V
I
C
60A
30A
= 10A
4
100
CE
CE
6
V
[V]
[V]
GE
C
10V
12V
[
9V
= 8V
o
C
]
125
6
8
4
Figure 2. Typical Output Characteristics
Figure 4. Transfer Characteristics
Figure 6. Saturation Voltage vs. V
180
150
120
120
100
90
60
30
80
60
40
20
20
16
12
0
0
8
4
0
0
0
0
T
Common Emitter
V
T
T
C
C
C
CE
= 125
= 25
= 125
= 20V
Collector-Emitter Voltage, V
o
o
C
o
C
C
4
Gate-Emitter Voltage,V
Gate-Emitter Voltage, V
2
I
C
5
= 15A
30A
17V
8
20V
4
60A
12
10
Common Emitter
T
C
GE
GE
= 25
CE
6
[V]
15V
[V]
V
o
[V]
GE
16
C
GE
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12V
10V
9V
= 8V
15
8
20