IRG4BC30F International Rectifier, IRG4BC30F Datasheet
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IRG4BC30F
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IRG4BC30F Summary of contents
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Features Features Features Features Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry ...
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Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of ...
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are wa ve 0.1 ...
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ase Tem perature (°C) C Fig Maximum Collector Current vs. Case Temperature ...
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MHz GE Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc ies ...
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150° 480V 15V G E 4.0 3.0 2.0 1.0 0 Collector-to-Emitter Current (A) C Fig ...
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L 50V Driver .T 80 Note the 50V pow er s upply, pulse w idth ...
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(. 2 2 (.255 (.240 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...