IRG4BC20F International Rectifier, IRG4BC20F Datasheet

IGBT FAST 600V 16A TO-220AB

IRG4BC20F

Manufacturer Part Number
IRG4BC20F
Description
IGBT FAST 600V 16A TO-220AB
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4BC20F

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2V @ 15V, 9A
Current - Collector (ic) (max)
16A
Power - Max
60W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Other names
*IRG4BC20F

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4BC20F
Manufacturer:
IR
Quantity:
8 922
Part Number:
IRG4BC20F
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4BC20FD
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4BC20FD-S
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRG4BC20FD-SPBF
Manufacturer:
IR
Quantity:
15 000
Part Number:
IRG4BC20FDPBF
Manufacturer:
IR
Quantity:
8 000
Benefits
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
Features
Features
Features
Features
Features
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
• Fast: Optimized for medium operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-220AB package
R
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
C
C
CM
LM
kHz in resonant mode).
parameter distribution and higher efficiency than
Generation 3
J
STG
CES
GE
ARV
D
D
θJC
θCS
θJA
frequencies ( 1-5 kHz in hard switching, >20
industry-standard Generation 3 IR IGBTs
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Maximum Power Dissipation
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case )
2.0 (0.07)
Typ.
–––
–––
0.5
C
E
10 lbf•in (1.1N•m)
-55 to + 150
TO-220AB
Max.
± 20
600
9.0
5.0
16
64
60
24
64
@V
V
CE(on) typ.
Max.
V
GE
–––
–––
2.1
80
CES
= 15V, I
= 600V
= 1.66V
C
4/17/2000
= 9.0A
Units
Units
g (oz)
°C/W
mJ
W
°C
V
A
V
1

Related parts for IRG4BC20F

IRG4BC20F Summary of contents

Page 1

Features Features Features Features Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry ...

Page 2

... IRG4BC20F Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage T V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current ...

Page 3

... Fig Typical Output Characteristics www.irf.com uty c yc le: 50 125° 90° ate drive as spec ifie tio Frequency (kHz) (Load Current = I of fundamental) RMS 100  150 15V Fig Typical Transfer Characteristics IRG4BC20F T ria lta 50V CC 5µs PULSE WIDTH Gate-to-Emitter Voltage (V) GE ...

Page 4

... IRG4BC20F 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 10 0.50 1 0.20 0.10 0.05 0.1 0.02  0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 15V PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° ...

Page 5

... Gate Resistance (Ohm) G Fig Typical Switching Losses vs. Gate Resistance www.irf.com  SHORTED 100 0 Fig Typical Gate Charge vs 0.1 -60 -40 - Ω Fig Typical Switching Losses vs. IRG4BC20F = 400V = 9. Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω = 50Ohm = 15V = 480V  9 4 100 120 140 160 ° ...

Page 6

... IRG4BC20F  3.0 Ω 50Ohm 150 C ° 480V CC 2 15V GE 2.0 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 6  100 V = 20V 125 SAFE OPERATING AREA Fig Turn-Off SOA o 10 100 1000 , Collector-to-Emitter Voltage (V) www.irf.com ...

Page 7

... Load Test Circuit 50V 1000V www.irf.com 480V .T. D river ff t=5µ IRG4BC20F 480V 25° 480µF 960V Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit * Driver same type as D.U.T 480V Fig. 14b - Switching Loss Waveforms 7 ...

Page 8

... IRG4BC20F (. 2 2 (.255 (.240 (. (. 1.15 (. 4.06 (.160 (. 3.55 (.140) 0.93 (.037 0.69 (.027 (. (. (. (. CONFORMS TO JEDEC OUTLINE TO-220AB IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

Related keywords