IRG4BC20FD International Rectifier, IRG4BC20FD Datasheet
IRG4BC20FD
Specifications of IRG4BC20FD
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IRG4BC20FD Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency ...
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... IRG4BC20FD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES ∆V Temperature Coeff. of Breakdown Voltage — /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop ...
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... V , Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 150 15V Fig Typical Transfer Characteristics IRG4BC20FD For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = 50V CC 5µs PULSE WIDTH ...
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... IRG4BC20FD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 10 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 15V PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs 50Ohm 15V 480V CC 1 0.1 -60 -40 - Ω Fig Typical Switching Losses vs. IRG4BC20FD = 400V = 9. Total Gate Charge (nC) G Gate-to-Emitter Voltage Ω 9 4 100 120 140 160 ° Junction Temperature ( Junction Temperature 30 ...
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... IRG4BC20FD 3.0 Ω 50Ohm 150 C ° 480V CC 2 15V GE 2.0 1.5 1.0 0.5 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 100 ° ° ° 0.4 0.8 1.2 1.6 2.0 2.4 2 ...
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... ° ° /µ Fig Typical Reverse Recovery vs ° ° . / /µs) f Fig Typical Stored Charge vs. di www.irf.com . Fig Typical Recovery Current vs /dt Fig Typical di f IRG4BC20FD ° ° 4 / /µ ° ° 4 /µ /dt vs. di /dt (rec / ...
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... IRG4BC20FD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device . d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 18d - µ S ...
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... µ www.irf.com D.U. 480V IRG4BC20FD 480V @25° ...
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... IRG4BC20FD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot (. (. (. (. 6.47 (.255 ) 6.10 (.240 ) (. (. 1.15 (.045 (. 4.06 (.160 ) (. 3.55 (.140 ) ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...